DB2S20500L Panasonic

Doc No. TT4-EA-12420 Revision. 2 Product Standards Schottky Barrier Diode DB2S20500L DB2S20500L Silicon epitaxial planar type Unit: mm 0.8 0.13 For high frequency rectification 2 Features Low forward voltage VF Short reverse recovery time trr Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 Marking Symbol:BA 0.3 0.6 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Cathode 2. Anode Panasonic SSMini2-F5-B JEITA SC-79 Code SOD-523 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 20 V Internal Connection Repetitive peak reverse voltage VRRM 15 V 2 Forward current (Average) IF(AV) 200 mA IFM 300 mA Peak forward current *1 IFSM 1 A Non-repetitive peak forward surge current Junction temperature Tj 125 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +125 C 1 Note:*1: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) Page 1 of 4 Established : 2010-03-12 Revised : 2013-12-12 1.2 1.6Doc No. TT4-EA-12420 Revision. 2 Product Standards Schottky Barrier Diode DB2S20500L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 200 mA 0.39 V Reverse current IR VR = 6 V 50 A Terminal capacitance Ct VR = 10 V, f = 1 MHz 6.1 pF IF = IR = 100 mA, Irr = 10 mA *1 trr 2.2 ns Reverse recovery time RL = 100 Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz. 4. *1: trr test circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 10 mA rr t = 2 s I = 100 mA p F t = 0.35 ns I = 100 mA Pulse Generator Wave Form Analyzer r R = 0.05 R = 100 L (PG-10N) (SAS-8130) R = 50 R = 50 s i Page 2of 4 Established : 2010-03-12 Revised : 2013-12-12