X-On Electronics has gained recognition as a prominent supplier of DB3J314K0L Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. DB3J314K0L Schottky Diodes & Rectifiers are a product manufactured by Panasonic. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.
We are delighted to provide the DB3J314K0L from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DB3J314K0L and other electronic components in the Schottky Diodes & Rectifiers category and beyond.
DB3J314K Silicon epitaxial planar type Unit: mm For high speed switching circuits DB3X314K in SMini3 type package Features Short reverse recovery time t rr Small reverse current I R Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 4X Packaging DB3J314K0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 1: Anode Absolute Maximum Ratings T = 25C 2: N.C. a 3: Cathode Parameter Symbol Rating Unit Panasonic SMini3-F2-B Reverse voltage V 30 V R JEITA SC-85 Maximum peak reverse voltage V 30 V Code RM Forward current I 30 mA F 3 Peak forward current I 150 mA FM Junction temperature T 125 C j Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +125 C stg 1 2 Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit V I = 1 mA 0.4 F1 F Forward voltage V V I = 30 mA 1.0 F2 F Reverse current I V = 30 V 300 nA R R Terminal capacitance C V = 10 V, f = 1 MHz 1.5 pF t R 1 * Reverse recovery time t I = I = 10 mA, I = 1 mA, R = 100 1.0 ns rr F R rr L Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 2 GHz 1: t measurement circuit * rr Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 1 mA rr t = 2 s I = 10 mA p F t = 0.35 ns I = 10 mA Pulse Generator Wave Form Analyzer r R = 0.05 R = 100 (PG-10N) (SAS-8130) L R = 50 R = 50 s i Publication date: April 2013 Ver. CED 1DB3J314K DB3J314K I -V DB3J314K I -V DB3J314K Ct-VR F F R R I V I V C V F F R R t R 1 10 5.0 T = 125C a Pulse test T = 25C a 5 10 80C 4.0 2 10 T = 125C a 25C 3.0 7 10 3 10 2.0 85C 9 10 4 10 40C 25C 1.0 40C 5 11 10 10 0 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 0 10 20 30 Reverse voltage V (V) Forward voltage V (V) Reverse voltage V (V) R F R Ver. CED 2 Forward current I (A) F Reverse current I (A) R Terminal capacitance C (pF) t