Product Information

DB6X314K0R

DB6X314K0R electronic component of Panasonic

Datasheet
Diode Switching 30V 0.03A 6-Pin SC-74 Embossed T/R

Manufacturer: Panasonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.4761 ea
Line Total: USD 1428.3

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - Warehouse 1


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 3000
Multiples : 3000

Stock Image

DB6X314K0R
Panasonic

3000 : USD 0.4761

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ir - Reverse Current
trr - Reverse Recovery time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif

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DB6X314K Silicon epitaxial planar type Unit: mm For high speed switching circuits Features Short reverse recovery time t rr Small reverse current I R Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 4X Basic Part Number Triple DB2J314 (Parallel) Packaging DB6X314K0R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 1: Anode-1 4: Cathode-3 Absolute Maximum Ratings T = 25C 2: Anode-2 5: Cathode-2 a 3: Anode-3 6: Cathode-1 Parameter Symbol Rating Unit Panasonic Mini6-G4-B Reverse voltage V 30 V R JEITA SC-74 Maximum peak reverse voltage V 30 V RM Code SOT-457 1 * Fowerd current I 30 mA F 1 * 6 5 4 Peak forward current I 150 mA FM Junction temperature T 125 C j Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +125 C stg 1 2 3 Note) 1: Value for single diode * Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit V I = 1 mA 0.4 F1 F Forward voltage V V I = 30 mA 1.0 F2 F Reverse current I V = 30 V 300 nA R R Terminal capacitance C V = 10 V, f = 1 MHz 1.5 pF t R 1 * Reverse recovery time t I = I = 10 mA, I = 1 mA, R = 100 1.0 ns rr F R rr L Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 2 GHz 1: t measurement circuit * rr Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 1 mA rr t = 2 s I = 10 mA p F t = 0.35 ns I = 10 mA Pulse Generator Wave Form Analyzer r R = 0.05 R = 100 (PG-10N) (SAS-8130) L R = 50 R = 50 s i Publication date: April 2013 Ver. CED 1DB6X314K DB6X314K I -V DB6X314K I -V DB6X314K Ct-VR F F R R I V I V C V F F R R t R 1 10 5.0 T = 125C Pulse test a T = 25C a 5 10 85C 4.0 2 T = 125C 10 a 25C 3.0 7 10 3 10 85C 2.0 25C 9 10 4 10 40C 1.0 40C 5 11 10 10 0 0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 Forward voltage V (V) Reverse voltage V (V) Reverse voltage V (V) F R R Ver. CED 2 Forward current I (A) F Reverse current I (A) R Terminal capacitance C (pF) t

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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