Product Information

DRC3123J0L

DRC3123J0L electronic component of Panasonic

Datasheet
Panasonic Bipolar Transistors - Pre-Biased TRANS W BLT-IN RES FLT LD 1.2x1.2mm
Manufacturer: Panasonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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DRC3123J0L
Panasonic

1 : USD 0.6022
10 : USD 0.2938
100 : USD 0.2024
500 : USD 0.1649
1000 : USD 0.1289
2500 : USD 0.104
10000 : USD 0.0895
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

Doc No. TT4-EA-11695 Revision. 2 Product Standards Transistors with Built-in Resistor DRC3123J0L DRC3123J0L Silicon NPN epitaxial planar type Unit: mm For digital circuits 1.2 Complementary to DRA3123J 0.3 0.13 DRC9123J in SSSMini3 type package 3 Features Low collector-emitter saturation voltage Vce(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 0.2 0.52 Marking Symbol: N4 (0.4) (0.4) 0.8 Packaging Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard) 1. Base 2. Emitter 3. Collector Panasonic SSSMini3-F2-B JEITA SC-105AA Absolute Maximum Ratings Ta = 25 C Code SOT-723 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Internal Connection Collector current IC 100 mA C Total power dissipation PT 100 mW R 1 B Junction temperature Tj 150 C R 2 Operating ambient temperature Topr -40 to +85 C E Storage temperature Tstg -55 to +150 C Resistance R1 2.2 k R2 47 k value Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 A, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 A Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 A Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.2 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 80 - Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.5 mA 0.25 V Vi(on) VCE = 0.2 V, IC = 5 mA 1.2 V Input voltage Vi(off) VCE = 5 V, IC = 100 A0.4V Input resistance R1 -30% 2.2 +30% k Resistance ratio R1/R2 0.037 0.047 0.057 - Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 1of 3 Page Established : 2009-10-27 Revised : 2014-03-25 0.8 1.2Doc No. TT4-EA-11695 Revision. 2 Product Standards Transistors with Built-in Resistor DRC3123J0L Technical Data ( reference ) PT - Ta IC - VCE 125 0.12 Ta = 25 IB = 400 A 350 A 0.1 100 300 A 0.08 250 A 75 200 A 0.06 50 150 A 0.04 100 A 25 0.02 50 A 0 0 0 20406080 100120140160180200 024 68 10 12 Ambient temperature Ta () Collector-emitter voltage VCE (V) hFE - IC VCE(sat) - IC 10 450 IC/IB = 20 VCE = 10 V 400 350 Ta = 85 1 300 250 25 25 200 Ta = 85 150 0.1 -40 100 50 -40 0 0.01 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 Collector current IC (A) Collector current IC (A) Io - VIN VIN - Io 1.E-02 100 Vo = 5 V Vo = 0.2 V 1.E-03 Ta = 85 10 -40 Ta = -40 1.E-04 25 25 1 1.E-05 85 1.E-06 0.1 00.2 0.4 0.6 0.811.2 0.0001 0.001 0.01 0.1 Input voltage VIN (V) Output current Io (A) 2of 3 Page Established : 2009-10-27 Revised : 2014-03-25 Forward current transfer ratio hFE Total power dissipation PT (mW) Output current Io (A) Collector-emitter saturation voltage Input voltage VIN (V) Collector current IC (A) VCE(sat) (V)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Panasonic may also be referenced as

Aromat
PA4
PAB
PAN
Panasonic - BSG
Panasonic - ECG
Panasonic - SSG
PANASONIC / SUNX
PANASONIC ACCESSORIES
PANASONIC BATTERIES
PANASONIC BATTERY
Panasonic Electric W
Panasonic Electric Works
Panasonic Electronic Components
Panasonic Electronic Components - Semiconductor Products
PANASONIC EW / AROMAT
PANASONIC EW/AROMAT
PANASONIC IMD
PANASONIC IND DEVICES (PIDSA)
Panasonic Industrial Automation Sales
Panasonic Industrial Devices
PANASONIC PIDSMY
Panasonic Semiconductors
PB4

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