Doc No. TT4-EA-11647 Revision. 2 Product Standards Transistors with Built-in Resistor DRC9113Z0L DRC9113Z0L Silicon NPN epitaxial planar type Unit: mm For digital circuits 1.6 Complementary to DRA9113Z 0.26 0.13 DRC5113Z in SSMini3 type package 3 Features Low collector-emitter saturation voltage Vce(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 0.7 Marking Symbol: N1 (0.5)(0.5) 1.0 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Base 2. Emitter 3. Collector Panasonic SSMini3-F3-B JEITA SC-89 Absolute Maximum Ratings Ta = 25 C Code SOT-490 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Internal Connection Collector current IC 100 mA C Total power dissipation PT 125 mW R 1 B Junction temperature Tj 150 C R 2 Operating ambient temperature Topr -40 to +85 C E Storage temperature Tstg -55 to +150 C Resistance R1 1 k R2 10 k value Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 A, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 A Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 A Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 1.5 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 30 - Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.5 mA 0.25 V Vi(on) VCE = 0.2 V, IC = 5 mA 1.0 V Input voltage Vi(off) VCE = 5 V, IC = 100 A 0.4 V Input resistance R1 -30% 1 +30% k Resistance ratio R1/R2 0.08 0.1 0.12 - Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. Note) 1. 1of 3 Page Established : 2009-10-22 Revised : 2014-03-14 0.85 1.6Doc No. TT4-EA-11647 Revision. 2 Product Standards Transistors with Built-in Resistor DRC9113Z0L Technical Data ( reference ) PT - Ta IC - VCE 150 0.12 Ta = 25 IB = 500 A 125 0.1 450 A 100 400 A 0.08 350 A 75 300 A 0.06 250 A 50 200 A 0.04 25 150 A 0.02 100 A 0 0 0 20 40 60 80 100 120 140 160 180 200 02 468 10 12 Ambient temperature Ta () Collector-emitter voltage VCE (V) hFE - IC VCE(sat) - IC 10 300 IC/IB = 20 VCE = 10 V 250 Ta = 85 1 200 25 150 25 Ta = 85 100 0.1 -40 50 -40 0 0.01 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 Collector current IC (A) Collector current IC (A) Io - VIN VIN - Io 1.E-02 100 Vo = 5 V Vo = 0.2 V Ta = 85 1.E-03 10 -40 25 1.E-04 25 Ta = -40 1 1.E-05 85 1.E-06 0.1 00.5 11.5 2 0.0001 0.001 0.01 0.1 Input voltage VIN (V) Output current Io (A) 2of 3 Page Established : 2009-10-22 Revised : 2014-03-14 Total power dissipation PT (mW) Output current Io (A) Forward current transfer ratio hFE Collector current IC (A) Collector-emitter saturation voltage Input voltage VIN (V) VCE(sat) (V)