X-On Electronics has gained recognition as a prominent supplier of DSK5J01R0L JFET across the USA, India, Europe, Australia, and various other global locations. DSK5J01R0L JFET are a product manufactured by Panasonic. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

DSK5J01R0L Panasonic

DSK5J01R0L electronic component of Panasonic
Images are for reference only
See Product Specifications
Part No. DSK5J01R0L
Manufacturer: Panasonic
Category: JFET
Description: Panasonic JFET Junction FET
Datasheet: DSK5J01R0L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.0962
10 : USD 0.8073
100 : USD 0.2117
1000 : USD 0.1663
3000 : USD 0.1544
9000 : USD 0.1469
24000 : USD 0.1426
45000 : USD 0.1426
99000 : USD 0.1361
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Pd - Power Dissipation
Package / Case
Packaging
Brand
Drain-Source Current At Vgs 0
Gate-Source Cutoff Voltage
Factory Pack Quantity :
Type
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DSK5J01R0L from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DSK5J01R0L and other electronic components in the JFET category and beyond.

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Doc No. TT4-EA-12789 Revision. 2 Product Standards Junction FETs DSK5J01 0L DSK5J010L Silicon N-channel Junciton FET Unit: mm For low frequency amplificaton / For pyroelctric sensor 2.0 DSK2J01 in SMini3 type package 0.3 0.13 Features 3 High gate-drain Voltage(Source open)VGDO Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 Marking Symbol: B6 0.9 (0.65)(0.65) Packaging 1.3 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Source 2. Drain 3. Gate Panasonic SMini3-F2-B JEITA SC-85 Absolute Maximum Ratings Ta = 25 C Code Parameter Symbol Rating Unit Gate-drain voltage (Source short) VGDS -55 V Drain current ID 30 mA Internal Connection Gate current IG 10 mA (G) 3 Power dissipation PD 150 mW Channel temperature Tch 150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C 1 2 (S) (D) Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Gate-drain voltage (Source short) VGDS IG = -100 A, VDS = 0 -55 V *1 IDSS VDS = 10 V , VGS = 0 1.0 12.0 mA Drain current Gate-source cutoff current IGSS VGS = -30 V, VDS = 0 -10 nA Gate-source cutoff voltage VGSC VDS = 10 V, ID = 10 A -5 V Forward transfer admittance Yfs VDS = 10 V, ID = 5 mA, f =1 kHz 2.5 7.5 mS Small-signal short-circuit input capacitance Ciss 6.0 pF VDS = 10 V, VGS = 0, f = 1 MHz Small-signal reverse transfer capacitance Crss 2.5 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Rank classification Code PQ R Rank PQ R IDSS (mA) 1.0 to 3.0 2.0 to 6.5 5.0 to 12.0 Marking symbol B6P B6Q B6R 1of 3 Page Established : 2010-10-26 Revised : 2014-03-25 1.25 2.1Doc No. TT4-EA-12789 Revision. 2 Product Standards Junction FETs DSK5J01 0L Technical Data ( reference ) ID-VGS PD-Ta 8 200 VDS = 10V -40 6 150 25 100 4 50 2 Ta = 85 0 0 0 20 40 60 80 100 120 140 160 180 200 -1.5 -1 -0.5 0 0.5 Temperature Ta () Gate-source voltage VGS (V) ID-VDS Yfs -ID 4 100 Ta= 25 Ta = 25 VGS= 0 V VDS = 10 V 3 10 2 -0.2 V 1 1 -0.4 V -0.6 V 0 0.1 02 468 10 12 0.01 0.1 1 10 Drain current ID (mA) Drain-source voltage VDS (V) Cx-VDS 12 Ta= 25 10 Coss Ciss 8 6 Crss 4 2 0 0 5 10 15 20 Drain-source voltage VDS (V) 2of 3 Page Established : 2010-10-26 Revised : 2014-03-25 Drain current ID (mA) Capacitance C (pF) Power Dissipation PD (mW) Forword transfer admittance Drain current ID (mA) Yfs (mS)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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