Product Information

LNJ8L4C38RA

LNJ8L4C38RA electronic component of Panasonic

Datasheet
Standard LEDs - SMD LED RED HI-BRT PLCC 2800MCD 614nm CLR

Manufacturer: Panasonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

LNJ8L4C38RA
Panasonic

1 : USD 1.2269
10 : USD 0.9976
100 : USD 0.8376
500 : USD 0.7394
1000 : USD 0.7032
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

LNJ8L4C38RA
Panasonic

1 : USD 1.2269
10 : USD 0.9976
100 : USD 0.8376
500 : USD 0.7394
1000 : USD 0.7032
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

LNJ8L4C38RA
Panasonic

1 : USD 1.6159
10 : USD 1.2727
100 : USD 1.1505
500 : USD 1.0894
1000 : USD 1.066
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Package / Case
LED Size
Illumination Color
Wavelength/Color Temperature
Forward Current
Forward Voltage
Luminous Intensity
Series
Packaging
Product
Vf - Forward Voltage
Width
Height
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Factory Pack Quantity :
Mounting Style
Cnhts
Hts Code
If - Forward Current
Mxhts
Product Type
Subcategory
Taric
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LNJ8L4C38RA Hight Bright Surface Mounting Chip LED 3528 (PLCC4) Type Absolute Maximum Ratings T = 25C a Lighting Color Parameter Symbol Rating Unit Red Power dissipation P 190 mW D Forward current I 70 mA F * Pulse forward current I 100 mA FP Reverse voltage V 5 V R Junction temperature T 125 C j Thermal resistance R 130 C/W th Operating ambient temperature T 40 to +105 C opr Storage temperature T 40 to +125 C stg Note) : The condition of I is duty 10%, Pulse width 1 msec. * FP Electro-Optical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit 1 * Luminous intensity I I = 50 mA 2 260 2 800 4 500 mcd O F Reverse current I V = 5 V 10 A R R 2 * Forward voltage V I = 50 mA 2.05 2.30 2.50 V F F Peak emission wavelength I = 50 mA 623 nm P F 3 * Dominant emission wavelength I = 50 mA 612 614 624 nm F d Spectral half band width I = 50 mA 20 nm F Note) 1: Measurement tolerance: 11% * 2: Measurement tolerance: 0.15 V * 3: Measurement tolerance: 2 nm * I I I V Relative luminous intensity T O F F F a 4 2 3 10 10 10 3 10 2 10 10 2 10 10 1 10 2 11010 1.0 1.5 2.0 2.5 3.0 40 20 0 20 40 60 80 100 Forward current I (mA) Forward voltage V (V) Ambient temperature T (C) F F a Relative luminous intensity I T P F a 80 100 Directive characteristics 60 80 0 10 10 20 20 30 30 60 40 80 40 40 50 50 60 40 60 60 40 20 70 70 20 20 80 80 90 90 0 0 500 550 600 650 700 100 80 60 40 20 0 20 40 60 80 100 0 20 40 60 80 100 120 Peak emission wavelength (nm) Relative luminous intensity (%) Ambient temperature T (C) P a Publication date: November 2016 Ver. BEK 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Relative luminous intensity (%) Luminous intensity I (mcd) O Forward current I (mA) F Forward current I (mA) Relative luminous intensity (%) FLNJ8L4C38RA Package (Unit: mm) Polarity 1 3 4 2 1: Cathode 2: Anode 3: Anode 3.5 0.15 4: N.C C 0.8 3.2 3 1 4 2 2.4 Marking Position 4 2 3 1 0.8 0.8 Recommended Land Layout 4.5 (1.5) 1.5 (1.5) (Note1) Tolerance unless specified: 0.1 mm. Ver. BEK 2 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) 2.2 Amount of Resin 0.8 Max.0.1 Max. 0.1 0.5 0.70 0.85 2.8 0.15 2.6 1.8 0.15

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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