PCDD10120G1 Silicon Carbide Schottky Barrier Diode 1200 V 10 A VRRM IF TO-252AA Q VF(Typ.) 1.5 V C 42 nC Features Temperature Independent Switching Behavior High Surge Current Capability Positive Temperature Coefficient on VF Low Conduction Loss Zero Reverse Recovery o o High junction temperature 175 C Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: TO-252AA molded plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0113 ounces, 0.3217 grams Application PFC, UPS, PV Inverter, EV Charging Station, Welder o Maximum Ratings and Thermal Characteristics (TC = 25 C unless otherwise specified) PARAMETER SYMBOL LIMIT UNITS Repetitive Peak Reverse Voltage VRRM 1200 V DC Blocking Voltage V 1200 V DC o Continuous forward current TC= 160 C IF 10 A o Repetitive Peak Surge Current T = 25 C , t =10ms 44 C p I A FRM o Half Sine Wave, D=0.1 T =125 C , t =10ms 40 C p o Peak Forward Surge Current TC= 25 C , tp =10ms 72 A o Half Sine Wave TC=125 C , tp =10ms 64 IFSM Peak Forward Surge Current 640 A t =10us, Pulse p Maximum Power Dissipation Ptotal 200 W o Operating Junction Temperature Range T -55~175 C J o Storage Temperature Range TSTG -55~175 C September 15,2021 PCDD10120G1-REV.00 Page 1 PCDD10120G1 o Electrical Characteristics (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS o IF = 10 A, TJ = 25 C - 1.5 1.7 Forward voltage drop VF V o IF = 10 A, TJ = 175 C - 2.0 - o V = 1200 V, T = 25 C - 6 100 A R J Reverse leakage current IR o V = 1200 V, T = 175 C - 0.04 - mA R J Total Capacitive Charge QC I = 10 A, V = 800V - 42 - nC F R VR = 1V, f = 1MHz - 529 - pF Total Capacitance C VR = 400V, f = 1MHz - 36 - pF VR = 800V, f = 1MHz - 25 - pF Capacitance Stored Energy EC VR = 800V - 12 - J o Thermal Resistance R JC - 0.75 - C/W September 15,2021 PCDD10120G1-REV.00 Page 2