X-On Electronics has gained recognition as a prominent supplier of 1N5819 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. 1N5819 Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

1N5819 Taiwan Semiconductor

1N5819 electronic component of Taiwan Semiconductor
Images are for reference only
See Product Specifications
Part No.1N5819
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Vr/40V Io/1A T/R
Datasheet: 1N5819 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

54: USD 0.5812 ea
Line Total: USD 31.38

Availability - 1163
Ship by Fri. 19 Jul to Thu. 25 Jul
MOQ: 54  Multiples: 1
Pack Size: 1
Availability Price Quantity
1163
Ship by Fri. 19 Jul to Thu. 25 Jul
MOQ : 54
Multiples : 1
54 : USD 0.5812
61 : USD 0.5162
100 : USD 0.4562
500 : USD 0.3015
1000 : USD 0.1881
2500 : USD 0.0556
5000 : USD 0.0379
10000 : USD 0.0375

5065
Ship by Thu. 25 Jul to Mon. 29 Jul
MOQ : 1
Multiples : 1
1 : USD 0.3691
10 : USD 0.284
100 : USD 0.1472
1000 : USD 0.0747
5000 : USD 0.0736
10000 : USD 0.0517
25000 : USD 0.0506
100000 : USD 0.0471

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 1N5819 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N5819 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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1N5817 - 1N5819 Taiwan Semiconductor CREAT BY ART 1A, 20V - 40V Schottky Barrier Rectifiers FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Case: DO-204AL (DO-41) Molding compound, UL flammability classification rating 94V-0 DO-204AL (DO-41) Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Terminal: Pure tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.33 gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER 1N5817 1N5818 1N5819 SYMBOL UNIT Maximum repetitive peak reverse voltage V 20 30 40 V RRM Maximum RMS voltage V 14 21 28 V RMS Maximum DC blocking voltage V 20 30 40 V DC Maximum average forward rectified current I 1 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 30 A FSM superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 0.45 0.55 0.60 V F 1 A T =25C 1 J I Maximum reverse current rated VR mA R T =100C 10 J Typical junction capacitance (Note 2) C 55 pF J Voltage rate of change (Rated V ) dV/dt 10000 V/s R R 45 JC Typical thermal resistance C/W R 100 JA T Operating junction temperature range - 55 to +125 C J Storage temperature range T - 55 to +125 C STG Note 1: Pulse test with PW=300 s, 1% duty cycle Note 2: Measure at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. Document Number: D1307014 Version: G151N5817 - 1N5819 Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE PART NO. PACKING CODE PACKAGE PACKING (*) SUFFIX SUFFIX A0 DO-41 3,000 / Ammo box (52mm taping) R0 DO-41 5,000 / 13 Paper reel 1N581x H G (Note 1) R1 DO-41 5,000 / 13 Paper reel (Reverse) B0 DO-41 1,000 / Bulk packing Note 1: defines voltage from 20V (1N5817) to 40V (1N5819) *: Optional available EXAMPLE PART NO. PACKING CODE PREFERRED P/N PART NO. PACKING CODE DESCRIPTION SUFFIX SUFFIX AEC-Q101 qualified 1N5817HA0G 1N5817 HA0 G Green compound RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG.1 MAXIMUM FORWARD CURRENT DERATING FIG. 2 MAXIMUM NON-REPETITIVE FORWARD CURVE SURGE CURRENT 30 1. 25 25 1 8.3ms Single Half Sine Wave 20 0. 75 15 0. 5 10 0. 25 5 0 0 0 25 50 75 100 125 150 1 10 100 LEAD TEMPERATURE ( C) NUMBER OF CYCLES AT 60 Hz FIG. 4 TYPICAL REVERSE LEAKAGE FIG. 3 TYPICAL FORWARD CHARACTERISTICS CHARACTERISTICS 100 100 10 T =125C J 10 1N5817 1 1N5818,1N5819 1 T =25C J 0. 1 Pulse Width=300s 1% Duty Cycle 0. 1 0. 01 0. 1 0. 3 0. 5 0. 7 0. 9 1. 1 1. 3 1. 5 1. 7 1. 9 2. 1 0 20 406080 100 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: D1307014 Version: G15 AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD A CURRENT (A) PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE A CURRENT (mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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