Silicon Carbide Schottky Barrier Diode 1200 V 20 A VRRM IF TO-220AC Q VF(Typ.) 1.5 V C 87 nC Features Temperature Independent Switching Behavior High Surge Current Capability Positive Temperature Coefficient on V F Low Conduction Loss Zero Reverse Recovery o High junction temperature 175 C Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: TO-220AC molded plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.067 ounces, 1.89 grams Application PFC, UPS, PV Inverter, EV Charging Station, Welder o Maximum Ratings and Thermal Characteristics (TC = 25 C unless otherwise specified) PARAMETER SYMBOL LIMIT UNITS Repetitive Peak Reverse Voltage VRRM 1200 V DC Blocking Voltage V 1200 V DC o Continuous Forward Current TC= 150 C IF 20 A o Repetitive Peak Surge Current T = 25 C , t =10ms 76 C p I A FRM o Half Sine Wave, D=0.1 T =125 C , t =10ms 56 C p o Peak Forward Surge Current TC= 25 C , tp =10ms 152 A o Half Sine Wave TC=125 C , tp =10ms 128 IFSM Peak Forward Surge Current 960 A t =10us, Pulse p Maximum Power Dissipation Ptotal 267.9 W o Operating Junction Temperature Range T -55~175 C J o Storage Temperature Range TSTG -55~175 C November 9,2020 PCDP20120G1-REV.00 Page 1o Electrical Characteristics (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS o IF = 20 A, TJ = 25 C - 1.5 1.7 Forward Voltage Drop VF V o IF = 20 A, TJ = 175 C - 2.0 - o V = 1200 V, T = 25 C - 15 180 A R J Reverse Leakage Current IR o V = 1200 V, T = 175 C - 0.07 - mA R J Total Capacitive Charge QC I = 20 A, V = 800V - 87 - nC F R VR = 1V, f = 1MHz - 1040 - pF Total Capacitance C VR = 400V, f = 1MHz - 77 - pF VR = 800V, f = 1MHz - 57 - pF Capacitance Stored Energy EC VR = 800V - 25.8 - J o Thermal Resistance RJC - 0.56 - C/W November 9,2020 PCDP20120G1-REV.00 Page 2