PPJA3433 30V P-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit: inch(mm) -30 V -1.1A Voltage Current Features RDS(ON) , VGS -4.5V, ID -1.1A<370m RDS(ON) , VGS -2.5V, ID -0.5A<540m RDS(ON) , VGS -2.5V, ID -0.1A<970m Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case : SOT-23 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0003 ounces, 0.0084 grams Marking : A33 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V -30 V DS Gate-Source Voltage V +8 V GS Continuous Drain Current I -1.1 A D (Note 4) Pulsed Drain Current I -4.4 A DM o T =25 C 1.25 W a Power Dissipation P D o o Derate above 25 C 10 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 100 JA - Junction to Ambient C/W November 26,2019-REV.02 Page 1 PPJA3433 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =-250uA -30 - - V DSS GS D Gate Threshold Voltage V V =V , I =-250uA -0.5 -0.98 -1.3 V GS(th) DS GS D V =-4.5V, I =-1.1A - 293 370 GS D Drain-Source On-State Resistance R V =-2.5V, I =-0.5A - 387 540 m DS(on) GS D V =-1.8V, I =-0.1A - 750 970 GS D Zero Gate Voltage Drain Current I V =-30V, V =0V - -0.01 -1 uA DSS DS GS Gate-Source Leakage Current I V =+8V, V =0V - +3.4 +10 uA GSS GS DS (Note 5) Dynamic Total Gate Charge Q - 1.6 - g V =-15V, I =-1.1A, DS D Gate-Source Charge Q - 0.5 - nC gs (Note 1,2) V =-4.5V GS Gate-Drain Charge Q - 0.3 - gd Input Capacitance Ciss - 125 - V =-15V, V =0V, DS GS Output Capacitance Coss - 22 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 6 - Turn-On Delay Time td - 11 - (on) V =-15V, I =-1.1A, DD D Turn-On Rise Time tr - 51 - V =-4.5V, ns GS Turn-Off Delay Time td - 65 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 46 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - -1.0 A S Diode Forward Current Diode Forward Voltage V I =-1.0A, V =0V - -0.9 -1.2 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 4. The maximum current rating is package limited. 5. Guaranteed by design, not subject to production testing. November 26,2019-REV.02 Page 2