Product Information

PJT138K_R1_00001

PJT138K_R1_00001 electronic component of Panjit

Datasheet
MOSFET 2 N Channel (Dual) 50V 360mA 1.5V @ 250uA 1.6 Ω @ 500mA,10V SOT-363 RoHS

Manufacturer: Panjit
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3441 ea
Line Total: USD 0.34

88961 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6770 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 10
Multiples : 10
10 : USD 0.0638
100 : USD 0.0521
300 : USD 0.0461
3000 : USD 0.0417
6000 : USD 0.0382
9000 : USD 0.0365

88961 - WHS 2


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.3441
10 : USD 0.2337
100 : USD 0.1483
1000 : USD 0.0664
3000 : USD 0.0344
9000 : USD 0.032

     
Manufacturer
Product Category
Brand
Rohs
Package
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
LoadingGif

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The PJT138K_R1_00001 with MOSFET 2 N Channel (Dual) 50V 360mA 1.5V @ 250uA 1.6 Ω @ 500mA,10V SOT-363 RoHS is a dual MOSFET device from the Panjit family. It is designed to be used in analog circuits, audio, and motor control applications. It offers low on-resistance and high current handling capability. It has a drain to source voltage of 50V, a drain current of 360mA, a gate-to-source voltage of 1.5V at 250uA, a drain-to-source on resistance of 1.6 Ω, and a maximum gate leakage current of 500mA. It is packaged in a SOT-363 form factor and meets the RoHS standards.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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