The PTW20N50A is a MOSFET with a TO-3P RoHS package manufactured by PIP. It is a vertical P-channel Enhancement Mode Gallium Nitride (eGaN) Field-Effect Transistor (FET) which is specifically designed to minimize power loss in high frequency switching applications. Features include an Ultra-High dV/dt rating of 25V/ns, 50mOhm typical on-resistance, 130V drain-source voltage, 20A drain current, 14nC total gate charge, 4.9nC typical gate charge, and a fast switching speed. The RoHS package allows for more flexible PCB layout design in small spaces, and the device is RoHS compliant.