PTW20N50A PIP

PTW20N50A electronic component of PIP
PTW20N50A PIP
PTW20N50A MOSFETs
PTW20N50A  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PTW20N50A MOSFETs across the USA, India, Europe, Australia, and various other global locations. PTW20N50A MOSFETs are a product manufactured by PIP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PTW20N50A
Manufacturer: PIP
Category: MOSFETs
Description: MOSFET TO-3P RoHS
Datasheet: PTW20N50A Datasheet (PDF)
Price (USD)
1: USD 1.6017 ea
Line Total: USD 1.6 
Availability : 0
  
QtyUnit Price
1$ 1.6017
10$ 1.1803
30$ 1.1031
100$ 1.026
500$ 0.9899
1000$ 0.9731

Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.6017
10$ 1.1803
30$ 1.1031
100$ 1.026
500$ 0.9899
1000$ 0.9731

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PTW20N50A from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PTW20N50A and other electronic components in the MOSFETs category and beyond.

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The PTW20N50A is a MOSFET with a TO-3P RoHS package manufactured by PIP. It is a vertical P-channel Enhancement Mode Gallium Nitride (eGaN) Field-Effect Transistor (FET) which is specifically designed to minimize power loss in high frequency switching applications. Features include an Ultra-High dV/dt rating of 25V/ns, 50mOhm typical on-resistance, 130V drain-source voltage, 20A drain current, 14nC total gate charge, 4.9nC typical gate charge, and a fast switching speed. The RoHS package allows for more flexible PCB layout design in small spaces, and the device is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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