X-On Electronics has gained recognition as a prominent supplier of PDN6911S mosfet across the USA, India, Europe, Australia, and various other global locations. PDN6911S mosfet are a product manufactured by Potens. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PDN6911S

Name: PDN6911S
Brand: Potens
SKU: PDN6911S_Potens
Availability: OutOfStock
Rating: 5 (11 reviews)

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Part No.	PDN6911S
Manufacturer:	Potens
Category:	MOSFET
Description:	MOSFET P Trench 60V 2A (Tc) 2.5V @ 250uA 190 mÎ© @ 2A,10V SOT-23-3S RoHS
Datasheet:	PDN6911S Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

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We proudly offer the PDN6911S MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the PDN6911S MOSFET.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Manufacturer Potens Potens
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package SOT - 23 - 3S SOT - 23 - 3S
Brand Category Potens Potens
Fet Type p trench p trench
Drain To Source Voltagevdss 60 V 60 V
Continuous Drain Current Id @ 25°C 2 A (t C) 2 A (t C)
Vgsth Max @ Id 2.5 V @ 250ua 2.5 V @ 250ua
Rds On Max @ Id Vgs 190 m @ 2a,10v 190 m @ 2a,10v
Power Dissipation-Max Ta 1.56 W 1.56 W
Drain Source Voltage Vdss 60 V 60 V
Continuous Drain Current Id 2 A 2 A
Power Dissipation Pd 1.56 W 1.56 W
Drain Source On Resistance Rdson@Vgs Id 190 mOhms @10V , 2A 190 mOhms @10V , 2A
Gate Threshold Voltage Vgsth@Id 2.5 V @250uA 2.5 V @250uA
Type P Channel P Channel