The Infineon IPD200N15N3-G is a N-Trench MOSFET with 150V Drain-Source voltage and 50A (Tc) of drain current. It features a Rds(on) of 4V @ 90uA, 20mΩ @ 50A, 10V PG-TO252-3 package and is RoHS compliant. This MOSFET is easy to use, has a low gate charge, requires no Reverse Lifetime, and has fast switching performance. The IPD200N15N3-G provides high reliability and power efficiency, making it suitable for high density, robust systems where space is at a premium.