< Dual-In-Line Package Intelligent Power Module > PSS20S71F6 TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS 3 phase DC/AC inverter 600V / 20A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor APPLICATION AC 100~240Vrms(DC voltage:400V or below) class low power motor control TYPE NAME PSS20S71F6 With temperature output function INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS For P-side : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC), Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply) Temperature output : Outputting LVIC temperature by analog signal Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active) UL Recognized : UL1557 File E80276 INTERNAL CIRCUIT DIPIPM V (1) UFS P(37) V (3) UFB HVIC1 IGBT1 Di1 V (4) P1 U (6) HO P U(36) V (7) VFS V (9) VFB HVIC2 IGBT2 Di2 V (10) P1 V (12) HO P V(35) V (13) WFS V (15) WFB HVIC3 IGBT3 Di3 V (16) P1 HO W (18) P W(34) IGBT4 Di4 LVIC U OUT V (20) OT NU(33) U (21) N IGBT5 Di5 V (22) N V OUT W (23) N NV(32) F (24) O IGBT6 Di6 CFO(25) WOUT CIN(26) NW(31) V (27) NC V (28) N1 Publication Date : February 2014 1 < Dual-In-Line Package Intelligent Power Module > PSS20S71F6 TRANSFER MOLDING TYPE INSULATED TYPE MAXIMUM RATINGS (T = 25C, unless otherwise noted) j INVERTER PART Symbol Parameter Condition Ratings Unit V Supply voltage Applied between P-NU,NV,NW 450 V CC V Supply voltage (surge) Applied between P-NU,NV,NW 500 V CC(surge) V Collector-emitter voltage 600 V CES I Each IGBT collector current T = 25C 20 A C C I Each IGBT collector current (peak) T = 25C, less than 1ms 40 A CP C P Collector dissipation T = 25C, per 1 chip 76.9 W C C T Junction temperature -20~+150 C j CONTROL (PROTECTION) PART Symbol Parameter Condition Ratings Unit VD Control supply voltage Applied between VP1-VNC, VN1-VNC 20 V V Control supply voltage Applied between V -V , V -V ,V V 20 V DB UFB UFS VFB VFS WFB- WFS V Input voltage Applied between U , V , W , U , V , W -V -0.5~V +0.5 V IN P P P N N N NC D V Fault output supply voltage Applied between F -V -0.5~V +0.5 V FO O NC D I Fault output current Sink current at F terminal 1 mA FO O V Current sensing input voltage Applied between CIN-V -0.5~V +0.5 V SC NC D TOTAL SYSTEM Symbol Parameter Condition Ratings Unit Self protection supply voltage limit V = 13.5~16.5V, Inverter Part D V 400 V CC(PROT) (Short circuit protection capability) T = 125C, non-repetitive, less than 2s j T Module case operation temperature Measurement point of Tc is provided in Fig.1 -20~+100 C C T Storage temperature -40~+125 C stg 60Hz, Sinusoidal, AC 1min, between connected all pins V Isolation voltage 2500 V iso rms and heat sink plate Fig. 1: T MEASUREMENT POINT C Control terminals 17.7mm 18mm Groove IGBT chip position FWDi chip position Tc point Heat sink side Power terminals THERMAL RESISTANCE Limits Symbol Parameter Condition Unit Min. Typ. Max. R Junction to case thermal Inverter IGBT part (per 1/6 module) - - 1.3 K/W th(j-c)Q resistance (Note 1) Rth(j-c)F Inverter FWDi part (per 1/6 module) - - 3.0 K/W Note 1: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100m~+200m on the contacting surface of DIPIPM and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal conductivity of the applied grease. For reference, Rth(c-f) is about 0.3K/W (per 1/6 module, grease thickness: 20m, thermal conductivity: 1.0W/mk). Publication Date : February 2014 2