< Dual-In-Line Package Intelligent Power Module > PSS35S92F6-AG PSS35S92E6-AG TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS 3 phase DC/AC inverter 600V / 35A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor APPLICATION AC 100~240Vrms(DC voltage:400V or below) class low power motor control TYPE NAME PSS35S92F6-AG With temperature output function PSS35S92E6-AG With OT protection function INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS For P-side : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC), Over temperature protection (OT, PSS35S92E6-AG only) Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply) and OT fault Temperature output : Outputting LVIC temperature by analog signal (PSS35S92F6-AG only) Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active) UL Recognized : UL1557 File E323585 INTERNAL CIRCUIT P(24) IGBT1 V (2) UFB Di1 V (3) VFB U(23) IGBT2 Di2 VWFB(4) HVIC U (5) P V(22) V (6) P IGBT3 Di3 W (7) P V (8) P1 W(21) V (9) IGBT4 NC Di4 U (10) N NU(20) V (11) N IGBT5 Di5 W (12) N V (13) N1 NV(19) LVIC F (14) O IGBT6 Di6 CIN(15) V (16) NC NW(18) V (17) OT Built-in temperature output type: V OT (PSS**S92F6-AG) Built-in OT type: NC (No Connection) (PSS**S92E6-AG) Publication Date : December 2013 1 < Dual-In-Line Package Intelligent Power Module > PSS35S92F6-AG, PSS35S92E6-AG TRANSFER MOLDING TYPE INSULATED TYPE MAXIMUM RATINGS (T = 25C, unless otherwise noted) j INVERTER PART Symbol Parameter Condition Ratings Unit V Supply voltage Applied between P-NU,NV,NW 450 V CC V Supply voltage (surge) Applied between P-NU,NV,NW 500 V CC(surge) V Collector-emitter voltage 600 V CES I Each IGBT collector current T = 25C 35 A C C I Each IGBT collector current (peak) T = 25C, less than 1ms 70 A CP C P Collector dissipation T = 25C, per 1 chip 66.6 W C C T Junction temperature (Note 1) -30~+150 C j Note1: The maximum junction temperature rating of built-in power chips is 150C( Tc100C).However, to ensure safe operation of DIPIPM, the average junction temperature should be limited to Tj(Ave)125C ( Tc100C). CONTROL (PROTECTION) PART Symbol Parameter Condition Ratings Unit V Control supply voltage Applied between V -V , V -V 20 V D P1 NC N1 NC V Control supply voltage Applied between V -U, V -V, V -W 20 V DB UFB VFB WFB V Input voltage Applied between U , V , W -V , U , V , W -V -0.5~V +0.5 V IN P P P PC N N N NC D VFO Fault output supply voltage Applied between FO-VNC -0.5~VD+0.5 V I Fault output current Sink current at F terminal 1 mA FO O V Current sensing input voltage Applied between CIN-V -0.5~V +0.5 V SC NC D TOTAL SYSTEM Symbol Parameter Condition Ratings Unit Self protection supply voltage limit V = 13.5~16.5V, Inverter Part D V 400 V CC(PROT) (Short circuit protection capability) T = 125C, non-repetitive, less than 2s j T Module case operation temperature Measurement point of Tc is provided in Fig.1 -30~+100 C C T Storage temperature -40~+125 C stg 60Hz, Sinusoidal, AC 1min, between connected all pins V Isolation voltage 1500 V iso rms and heat sink plate Fig. 1: T MEASUREMENT POINT C Control terminals DIPIPM 11.6mm 3mm IGBT chip position Tc point Heat sink side Power terminals THERMAL RESISTANCE Limits Symbol Parameter Condition Unit Min. Typ. Max. R Inverter IGBT part (per 1/6 module) - - 1.5 K/W th(j-c)Q Junction to case thermal R resistance (Note 2) Inverter FWDi part (per 1/6 module) - - 2.8 K/W th(j-c)F Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100m~+200m on the contacting surface of DIPIPM and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal conductivity of the applied grease. For reference, Rth(c-f) is about 0.3K/W (per 1/6 module, grease thickness: 20m, thermal conductivity: 1.0W/mk). Publication Date : December 2013 2