LXA03D530
Qspeed Family
530 V, 3 A X-Series Diode
Product Summary General Description
This device is an extremely low reverse recovery
I 3 A
F(AVG)
530 V silicon diode. Its recovery characteristics
V 530 V
RRM
increase efficiency, reduce EMI and eliminate
Q (Typ at 125 C) 75 nC
RR
snubbers.
I (Typ at 125 C) 3.2 A
RRM
Softness t /t (Typ at 125 C) 0.34
B A
Applications
High-voltage power rectifier
Pin Assignment
Power factor correction (PFC) boost diode
Motor drive circuits
DC-AC inverters
Features
Low Q , low I , low t
RR RRM RR
High dI /dt capable
F
Soft recovery
D Package (SO-8C)
Benefits
Reduces peak reverse voltage
LXA03D530
Increases efficiency
AKAK
Eliminates need for snubber circuits
Reduces EMI filter component size & count
RoHS Compliant
Enables extremely fast switching
Package uses lead-free plating and
green mold compound.
Halogen-free per IEC 61249-2-21.
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired.
Functional operation under these conditions is not implied.
Symbol Parameter Conditions Rating Units
V Peak repetitive reverse voltage T = 25 C 530 V
RRM J
I Average forward current T = 150 C, T = 29 C 3 A
F(AVG) J L
I Non-repetitive peak surge current 60 Hz, cycle, T = 25 C 25 A
FSM C
I Non-repetitive peak surge current cycle of t = 28 s Sinusoid, T = 25 C 350 A
FSM C
T Maximum junction temperature 150 C
J(MAX)
T Storage temperature 55 to 150 C
STG
P Power dissipation T = 25 C 4.6 W
D L
www.power.com April 2015
LXA03D530
Thermal Resistance
Symbol Resistance Conditions Rating Units
2
R Junction to ambient Soldered to 1 sq. in. (645 mm ), 2 oz. Cu. 80 C/W
JA
R Junction to lead Lead temperature measured on pin 7 27 C/W
JL
Electrical Specifications at T = 25 C (unless otherwise specified)
J
Symbol Parameter Conditions Min Typ Max Units
DC Characteristics
V = 530 V, T = 25 C - 0.4 250 A
R J
I Reverse current
R
V = 530 V, T = 125 C - 0.275 - mA
R J
I = 3 A, T = 25 C - 1.55 1.71 V
F J
V Forward voltage
F
I = 3 A, T = 150 C - 1.33 - V
F J
C Junction capacitance V = 10 V, 1 MHz - 15 - pF
J R
Dynamic Characteristics
T = 25 C - 25 34.3 ns
dI/dt = 200 A/s J
t Reverse recovery time
RR
V = 400 V, I = 3 A
R F
T = 125 C - 33 - ns
J
T = 25 C - 39 55 nC
J
dI/dt = 200 A/s
Q Reverse recovery charge
RR
V = 400 V, I = 3 A
R F T = 125 C - 75 - nC
J
T = 25 C - 2.2 - A
Maximum reverse dI/dt = 200 A/s J
I
RRM
recovery current V = 400 V, I = 3 A
R F T = 125 C - 3.2 - A
J
T = 25 C - 0.7 -
t J
dI/dt = 200 A/s
B
Softness factor =
S
V = 400 V, I = 3 A
R F
tA
T = 125 C - 0.34 -
J
Note to component engineers: X-Series diodes employ Schottky technologies in their design and
construction. Therefore, component engineers should plan their test setups to be similar to those for
traditional Schottky test set-ups. (For additional details, see Application Note AN-300.)
I t
F RR
dI /dt
F
t t
A B
0
0.4xI
RRM
I
RRM
Figure 1. Reverse Recovery Definitions. Figure 2. Reverse Recovery Test Circuit.
2
www.power.com Rev 1.0 04/15