The PNMT8N1 is a MOSFET N Channel 20V 300mA 1.1V @ 1mA 500mO @ 300mA,4V DFN3*2*0.75 RoHS manufactured by Prisemi. This part is a low threshold voltage, high current MOSFET for use in Compact switch mode power supplies, PWM switching and power regulation applications. It has an electrical connection of drain-source, gate-source, and gate-drain. It has a breakdown voltage of 20V, a maximum drain current of 300mA, a maximum drain-source voltage of 1.1V @ 1mA, and a maximum rDS (on) of 500mO @ 300mA. It is designed to fit into 3mm x 2mm x 0.75mm small footprint DFN3 package and is compliant with the RoHS directive.