Product Information

WPM3401-3/TR

Name: WPM3401-3/TR
Brand: Will Semiconductor
SKU: WPM34013TR_WillSemiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

WPM3401-3/TR electronic component of Will Semiconductor

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Datasheet

MOSFET SOT-23-3L RoHS

Manufacturer: Will Semiconductor

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.1257 ea
Line Total: USD 0.63

0 - Global Stock

MOQ: 5 Multiples: 5
Pack Size: 5

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Warehouse 1 Ships to you between Mon. 13 May to Thu. 16 May MOQ : 5 Multiples : 5 WPM3401-3/TR Will Semiconductor	5 : USD 0.1289 50 : USD 0.1072 150 : USD 0.0963 500 : USD 0.0881 3000 : USD 0.0815 6000 : USD 0.0783

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Additional Infomation About Product

The WPM3401-3/TR electronic component is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Will Semiconductor. This electronic part is in a SOT-23-3L (Small Outline Package) package, which is RoHS (Restriction on Hazardous Substances) compliant. It has a Drain-Source current of 10A and a maximum Drain-Source voltage of 80V. Features of the MOSFET include low RDS(on) and high efficiency. It is suitable for amplifying or switching applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Will Semiconductor may also be referenced as

Will Semicon
Will Semiconductor
WILLSEMI(Will Semicon)

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Manufacturer Will Semiconductor Will Semiconductor
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package SOT - 23 - 3L SOT - 23 - 3L
Brand Category Will Semiconductor Will Semiconductor
Drain Source Voltage Vdss 30 V 30 V
Continuous Drain Current Id 4.6 A 4.6 A
Drain Source On Resistance Rdson@Vgs Id 38 mOhms @10V , 4.3A 38 mOhms @10V , 4.3A
Power Dissipation Pd 1.3 W 1.3 W
Gate Threshold Voltage Vgsth@Id 1 V @250uA 1 V @250uA
Reverse Transfer Capacitance Crss@Vds 90 pF @15V 90 pF @15V
Type P Channel P Channel
Input Capacitance Ciss@Vds 1.25 nF @15V 1.25 nF @15V
Total Gate Charge Qg@Vgs 24.8 nC @10V 24.8 nC @10V
Operating Temperature + 150 C @ (Tj) + 150 C @ (Tj)