PE423422A-Z pSemi

Product Specification PE423422 UltraCMOS SPDT RF Switch 1006000 MHz Product Description Features The PE423422 is a HaRP technology-enhanced reflective SPDT RF switch. It has received AEC-Q100 AEC-Q100 Grade 2 certified Grade 2 certification and meets the quality and Supports operating temperature up to performance standards that makes it suitable for use in +105C harsh automotive environments. It is designed to cover a wide range of wireless applications from 100 MHz Low insertion loss through 6 GHz such as automotive infotainment and 0.25 dB 1000 MHz traffic safety applications. No blocking capacitors are 0.40 dB 3000 MHz required if DC voltage is not present on the RF ports. 0.65 dB 5000 MHz 0.90 dB 6000 MHz Peregrines HaRP technology enhancements deliver High isolation high linearity and excellent harmonics performance. It is 41 dB 1000 MHz an innovative feature of the UltraCMOS process, offering 28 dB 3000 MHz the performance of GaAs with the economy and 20 dB 5000 MHz integration of conventional CMOS. 16 dB 6000 MHz Excellent linearity The PE423422 is manufactured on Peregrines IIP2 of 115 dBm UltraCMOS process, a patented variation of silicon-on- IIP3 of 73.5 dBm insulator (SOI) technology on a sapphire substrate, offering excellent RF performance. High ESD tolerance 1kV HBM on all pins 200V MM on all pins 1kV CDM on all pins Wide supply range of 2.3V to 5.5V Figure 1. Functional Diagram Figure 2. Package Type 12-lead 2x2 mm QFN DOC-02173 Document No. DOC-30514-2 www.psemi.com 2013-2014 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 13 PE423422 Product Specification Table 1. Electrical Specifications 25C, V = 2.3V to 5.5V (Z = Z = 50 ) DD S L Parameter Path Condition Min Typ Max Unit Operational frequency 100 6000 MHz 1001000 MHz 0.25 0.35 dB 10002000 MHz 0.30 0.40 dB 20003000 MHz 0.40 0.50 dB Insertion loss RFCRFX 30004000 MHz 0.50 0.70 dB 1 40005000 MHz 0.65 0.90 dB 1 50006000 MHz 0.90 1.25 dB 1001000 MHz 39 41 dB 10002000 MHz 32 33 dB 20003000 MHz 26 28 dB Isolation RFXRFX 30004000 MHz 22 24 dB 40005000 MHz 18 20 dB 50006000 MHz 15 16 dB 1001000 MHz 41 44 dB 10002000 MHz 33 35 dB 20003000 MHz 27 29 dB Isolation RFCRFX 30004000 MHz 22 24 dB 40005000 MHz 18 20 dB 50006000 MHz 15 17 dB 1001000 MHz 28 dB 10002000 MHz 21 dB 20003000 MHz 20 dB Return loss RFCRFX 30004000 MHz 18 dB 1 40005000 MHz 16 dB 1 50006000 MHz 13 dB +32 dBm output power, 850 / 900 MHz -99 dBc 2nd Harmonic, 2fo RFCRFX +32 dBm output power, 1800 / 1900 MHz -101 dBc +32 dBm output power, 850 / 900 MHz -93 dBc 3rd Harmonic, 3fo RFCRFX +32 dBm output power, 1800 / 1900 MHz -87 dBc Bands I, II, V, VIII +20 dBm CW TX freq at RFC, IMD3 -122 dBm -15 dBm CW 2Tx-Rx at RFC, 50 Input IP2 RFCRFX 1006000 MHz 115 dBm Input IP3 RFCRFX 1006000 MHz 73.5 dBm 2 Input 0.1 dB compression point RFCRFX 1006000 MHz 34 dBm Switching time 50% CTRL to 90% or 10% RF 2 4 s Notes: 1. High frequency performance can be improved by external matching 2. The input 0.1dB compression point is a linearity figure of merit. Refer to Table 4 for the RF input power P (50) MAX,CW 2013-2014 Peregrine Semiconductor Corp. All rights reserved. Document No. DOC-30514-2 UltraCMOS RFIC Solutions Page 2 of 13