ESD Product Specification PE423641 UltraCMOS SP4T RF Switch 503000 MHz Product Description Features The PE423641 is a HaRP technology-enhanced reflective SP4T RF switch. It has received AEC-Q100 AEC-Q100 Grade 2 certified Grade 2 certification and meets the quality and Supports operating temperature up to performance standards that makes it suitable for use in +105C harsh automotive environments. It is designed to cover a TM wide range of wireless applications from 50 MHz through HaRP technology enhancements 3 GHz such as cellular antenna band switching, provide excellent linearity automotive infotainment and traffic safety applications. Low harmonics of 2fo = 83 dBc No blocking capacitors are required if DC voltage is not and 3fo = 77 dBc +35 dBm present on the RF ports. IMD3 of 111 dBm WCDMA band 1 The PE423641 is manufactured on Peregrines UltraCMOS process, a patented variation of silicon-on- IIP3 of 68 dBm insulator (SOI) technology on a sapphire substrate, Low insertion loss offering excellent RF performance. 0.50 dB 1000 MHz 0.65 dB 2200 MHz Peregrines HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is High isolation an innovative feature of the UltraCMOS process, offering 32 dB 1000 MHz the performance of GaAS with the economy and 25 dB 2200 MHz integration of conventional CMOS. High ESD performance 2 kV HBM on all pins Figure 1. Functional Diagram 100V MM on all pins 1 kV CDM on all pins Integrated decoder for 2-pin control Accepts 1.8V and 2.75V levels Figure 2. Package Type 16-lead 3 x 3 mm QFN 71-0094 Document No. DOC-12414-2 www.psemi.com 2013-2014 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 11 PE423641 Product Specification Table 1. Electrical Specifications +25C, V = 2.75V (Z = Z = 50 ) DD S L Parameter Path Condition Min Typ Max Unit Operational frequency 50 3000 MHz 501000 MHz 0.50 0.60 dB 10002200 MHz 0.65 0.75 dB Insertion loss RFCRFX (symmetric ports) 22002700 MHz 0.80 0.95 dB 27003000 MHz 0.95 1.15 dB 501000 MHz 30 32 dB 10002200 MHz 23 25 dB Isolation RFCRFX 22002700 MHz 21 23 dB 27003000 MHz 20 22 dB 501000 MHz 24 dB 10002200 MHz 19 dB Return loss (active ports) RFCRFX 22002700 MHz 16 dB 27003000 MHz 14 dB 501000 MHz 23 dB 10002200 MHz 16 dB Return loss (common ports) RFCRFX 22002700 MHz 14 dB 27003000 MHz 13 dB +35 dBm output power, 850/900 MHz 83 80 dBc 2nd harmonic RFX +33 dBm output power, 1800/1900 MHz 85 78 dBc +35 dBm output power, 850/900 MHz 77 73.5 dBc 3rd harmonic RFX +33 dBm output power, 1800/1900 MHz 78 72.5 dBc RF Measured at 2.14 GHz at ANT port, input +20 dBm CW IMD3 111 dBm signal at 1.95 GHz and 15 dBm CW signal at 1.76 GHz Input IP2 RFCRFX 503000 MHz 115 dBm Input IP3 RFCRFX 503000 MHz 68 dBm 1 Input 0.1 dB compression point RFCRFX 503000 MHz 37 dBm Switching time 50% CTRL to 90% or 10% RF 1 2 s Note 1: Input 0.1 dB compression point is a linearity figure of merit. Refer to Table 3 for the operating RF input power (50). 2013-2014 Peregrine Semiconductor Corp. All rights reserved. Document No. DOC-12414-2 UltraCMOS RFIC Solutions Page 2 of 11