X-On Electronics has gained recognition as a prominent supplier of PE42521C-Z RF Switch ICs across the USA, India, Europe, Australia, and various other global locations. PE42521C-Z RF Switch ICs are a product manufactured by pSemi. We provide cost-effective solutions for RF Switch ICs, ensuring timely deliveries around the world.

PE42521C-Z pSemi

PE42521C-Z electronic component of pSemi
PE42521C-Z pSemi
PE42521C-Z RF Switch ICs
PE42521C-Z  Semiconductors

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See Product Specifications
Part No. PE42521C-Z
Manufacturer: pSemi
Category: RF Switch ICs
Description: RF Switch ICs SPDT High Iso High Power Fast switching Absorptive 50? Instrumentation Switch
Datasheet: PE42521C-Z Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 10.068 ea
Line Total: USD 10.07 
Availability - 3889
Ship by Wed. 21 May to Fri. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3889
Ship by Wed. 21 May to Fri. 23 May
MOQ : 1
Multiples : 1
1 : USD 10.068
1000 : USD 7.975
3000 : USD 7.975
6000 : USD 6.721

   
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We are delighted to provide the PE42521C-Z from our RF Switch ICs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PE42521C-Z and other electronic components in the RF Switch ICs category and beyond.

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Product Specification PE42521 UltraCMOS SPDT RF Switch 9 kHz 13 GHz Product Description Features The PE42521 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless HaRP technology enhanced applications. This broadband general purpose switch Fast settling time of 2 s maintains excellent RF performance and linearity from No gate and phase lag 9 kHz through 13 GHz. This switch is a pin-compatible upgraded version of PE42552 with fast switching time and No drift in insertion loss and phase higher power handling of 36 dBm continuous wave (CW) Fast switching time of 500 ns and 38.5 dBm instantaneous power in 50 4 GHz. The High power handling 4 GHz in 50 PE42521 exhibits high isolation, fast settling time, and is offered in a 3x3 mm QFN package. 36 dBm CW 38.5 dBm instantaneous power The PE42521 is manufactured on Peregrines 26 dBm terminated port UltraCMOS process, a patented variation of silicon-on- High linearity insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and 65 dBm IIP3 integration of conventional CMOS. Low insertion loss 0.75 dB 3 GHz 1.15 dB 10 GHz Figure 1. Functional Diagram 1.85 dB 13 GHz High isolation 44 dB 3 GHz 30 dB 10 GHz 17 dB 13 GHz ESD performance 3kV HBM on RF pins to GND 1.5kV HBM on all pins 1kV CDM on all pins Figure 2. Package Type DOC-50572 16-lead 3x3 mm QFN Document No. DOC-79380-1 www.psemi.com 2012-2016 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 16 PE42521 Product Specification Table 1. Electrical Specifications 25C, V = 3.3V, Vss = 0V or V = 3.4V, Vss = -3.4V, DD EXT DD EXT (Z = Z = 50 ) unless otherwise noted S L Parameter Path Condition Min Typ Max Unit As Operation frequency 9 kHz 13 GHz shown 9 kHz 10 MHz 0.60 0.80 dB 10 MHz 3 GHz 0.75 1.00 dB 3 GHz 7.5 GHz 0.95 1.20 dB Insertion loss RFCRFX 7.5 GHz 10 GHz 1.15 1.40 dB 10 GHz 12 GHz 1.75 2.20 dB 12 GHz 13 GHz 1.85 2.60 dB 9 kHz 10 MHz 70 90 dB 10 MHz 3 GHz 46 49 dB 3 GHz 7.5 GHz 35 37 dB Isolation RFXRFX 7.5 GHz 10 GHz 23 26 dB 10 GHz 12 GHz 16 19 dB 12 GHz 13 GHz 14 17 dB 9 kHz 10 MHz 80 90 dB 10 MHz 3 GHz 42 44 dB 3 GHz 7.5 GHz 39 41 dB Isolation RFCRFX 7.5 GHz 10 GHz 26 30 dB 10 GHz 12 GHz 18 21 dB 12 GHz 13 GHz 14 17 dB 9 kHz 10 MHz 23 dB 10 MHz 3 GHz 19 dB 3 GHz 7.5 GHz 16 dB Return loss (active port) RFC-RFX 7.5 GHz 10 GHz 21 dB 10 GHz 12 GHz 10 dB 12 GHz 13 GHz 15 dB 9 kHz 10 MHz 23 dB 10 MHz 3 GHz 19 dB 3 GHz 7.5 GHz 16 dB Return loss (common port) RFC-RFX 7.5 GHz 10 GHz 21 dB 10 GHz 12 GHz 10 dB 12 GHz 13 GHz 16 dB 9 kHz 10 MHz 32 dB 10 MHz 3 GHz 23 dB 3 GHz 7.5 GHz 18 dB Return loss (terminated port) RFX 7.5 GHz 10 GHz 11 dB 10 GHz 12 GHz 6 dB 12 GHz 13 GHz 5 dB 1 Input 0.1 dB compression point RFCRFX 600 MHz 13 GHz Fig. 5 dBm Input IP2 RFCRFX 834 MHz, 1950 MHz 120 dBm Input IP3 RFCRFX 834 MHz, 1950 MHz, and 2700 MHz 65 dBm Settling time 50% CTRL to 0.05 dB final value 2 4 s Switching time 50% CTRL to 90% or 10% of final value 500 700 ns Note 1: The input 0.1 dB compression point is a linearity figure of merit. Refer to Table 3 for the RF input power P (50 ) IN 2012-2016 Peregrine Semiconductor Corp. All rights reserved. Document No. DOC-79380-1 UltraCMOS RFIC Solutions Page 2 of 16

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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