AH125-89G Qorvo

AH125-89G electronic component of Qorvo
AH125-89G Qorvo
AH125-89G RF Amplifier
AH125-89G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of AH125-89G RF Amplifier across the USA, India, Europe, Australia, and various other global locations. AH125-89G RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

Part No. AH125-89G
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amp Chip Single GP 3.6GHz 6V 4-Pin(3+Tab) SOT-89
Datasheet: AH125-89G Datasheet (PDF)
Price (USD)
6: USD 13.0309 ea
Line Total: USD 78.19 
Availability : 0
  
QtyUnit Price
6$ 13.0309

Availability 0
Ship by Tue. 21 Oct to Mon. 27 Oct
MOQ : 6
Multiples : 1
QtyUnit Price
6$ 13.0309

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Brand
Number Of Channels
Input Return Loss
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the AH125-89G from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AH125-89G and other electronic components in the RF Amplifier category and beyond.

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AH125 W High Linearity InGaP HBT Amplifier Product Features Product Description Functional Diagram The AH125 is a high dynamic range driver amplifier in a GND 400 3600 MHz low-cost surface mount package. The InGaP/GaAs HBT is 4 +28 dBm P1dB able to achieve high performance across a broad range with +45 dBm OIP3 and +28 dBm of compressed 1dB power +45 dBm Output IP3 while drawing 150 mA current. The AH125 is available in 16.2 dB Gain 2140 MHz a lead-free/green/RoHS-compliant SOT-89 package. All devices are 100% RF and DC tested. 150 mA current draw 1 23 +5 V Single Supply The AH125 is targeted for use as a driver amplifier in RF IN GND RF OUT MTTF > 100 Years wireless infrastructure where high linearity, medium power, and high efficiency are required. Internal biasing allows Lead-free/Green/RoHS-compliant Function Pin No. the AH125 to maintain high linearity over temperature and SOT-89 Package RF Input 1 operate directly off a single +5V supply. This combination RF Output / Vcc 3 Class 2 HBM ESD rating (>2kV) makes the device an excellent candidate for transceiver line Ground 2, 4 cards in current and next generation multi-carrier 3G base stations or repeaters. Applications Repeaters Mobile Infrastructure LTE / WCDMA / EDGE / CDMA Specifications Typical Performance Parameter Units Min Typ Max Parameter Units Typical Operational Bandwidth MHz 400 3600 Frequency MHz 920 1960 2140 Test Frequency MHz 2140 Gain dB 20 17 16.2 Gain dB 14 16.2 18 Input Return Loss dB 20 16 12 Input Return Loss dB 12 Output Return Loss dB 9.9 9 12 (2) Output Return Loss dB 12 W-CDMA Channel Power dBm +19 +19 +19 -50 dBc ACLR (2) W-CDMA Channel Power dBm +19 Output P1dB dBm +28.1 +27.8 +28.0 -50 dBc ACLR (3) Output P1dB dBm +28 Output IP3 dBm +47 +47 +45 (3) Output IP3 dBm +41 +45 Noise Figure dB 7.7 4.6 4.4 Quiescent Collector Current Noise Figure dB 4.4 mA 150 Quiescent Collector Current Device Voltage V +5 mA 130 150 170 Device Voltage V +5 1. Test conditions unless otherwise noted: 25C, Vsupply = +5 V, in tuned application circuit. 2. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB 0.01% Probability, 3.84 MHz BW 3. OIP3 is measured with two tones separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 rule. Measured at 17dBm/tone for 900 MHz, 14 dBm/tone for 1960 MHz, and 12 dBm/tone for 2140 MHz. Absolute Maximum Rating Ordering Information Parameter Rating Part No. Description Storage Temperature -65 to +150 C AH125-89G W High Linearity InGaP HBT Amplifier RF Input Power, CW, 50 , T=25C Input P10dB AH125-89PCB900 900 MHz Evaluation Board Device Voltage +6 V AH125-89PCB1960 1960 MHz Evaluation Board Max Junction Temperature, T J 200 C AH125-89PCB2140 2140 MHz Evaluation Board 6 For 10 hours MTTF Thermal Resistance, AH125-89PCB2600 2600 MHz Evaluation Board 64.3 C / W JC Operation of this device above any of these parameters may cause permanent damage. Standard T/R size = 1000 pieces on a 7 reel. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales tqs.com Web site: www.TriQuint.com Page 1 of 12 April 2010 AH125 W High Linearity InGaP HBT Amplifier Typical Device Data S-Parameters (V = +5 V, I = 150 mA, 25 C, unmatched 50 ohm system) Device CC Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. S-Parameters (V = +5 V, I = 150 mA, 25 C, unmatched 50 ohm system, calibrated to device leads) Device CC Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 100 -2.51 176.96 19.12 153.71 -33.85 -7.98 -4.58 -168.55 300 -6.65 -179.55 16.82 171.45 -41.51 -51.50 -3.50 167.66 500 -0.47 -166.72 19.86 129.11 -32.54 37.90 -6.46 -173.90 700 -0.50 179.58 16.95 110.14 -32.11 15.12 -4.57 -177.11 900 -0.56 173.91 15.09 99.64 -32.29 6.66 -4.14 177.58 1100 -0.65 170.52 13.68 91.32 -32.15 2.53 -3.89 173.40 1300 -0.78 166.87 12.37 83.49 -32.04 -2.50 -3.71 169.83 1500 -0.82 163.90 11.21 76.80 -32.11 -4.03 -3.64 167.10 1700 -0.93 161.34 10.11 71.12 -31.97 -7.89 -3.70 164.08 1900 -0.93 157.61 9.40 64.93 -31.94 -9.93 -3.64 160.19 2100 -0.94 154.21 8.47 58.83 -31.97 -10.87 -3.54 156.60 2300 -0.91 151.59 7.66 53.42 -31.80 -14.20 -3.48 153.92 2500 -0.93 149.24 7.06 49.26 -32.04 -16.18 -3.67 152.18 2700 -0.90 145.94 6.70 43.87 -31.63 -16.91 -3.72 147.67 2900 -0.96 143.87 6.12 39.45 -31.18 -18.50 -3.54 143.63 3100 -1.07 139.90 5.74 34.00 -31.37 -23.47 -3.52 141.32 3300 -1.18 136.50 5.09 29.36 -31.25 -20.88 -3.70 140.24 3500 -1.18 133.80 4.62 24.20 -31.12 -27.12 -3.72 135.07 3700 -1.11 132.39 4.12 20.26 -31.25 -26.33 -3.64 130.47 Device S-parameters are available for download off of the website at:

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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