Product Information

CXE2089ZTR7

CXE2089ZTR7 electronic component of Qorvo

Datasheet
RF Amplifier 50-1000MHz NF 1.5dB Gain 20dB P1dB 23dBm

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 6.6927
25 : USD 4.1839
100 : USD 3.6143
250 : USD 2.9515
500 : USD 2.5476
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Series
Test Frequency
Brand
Number Of Channels
Development Kit
Input Return Loss
Isolation Db
Product Type
Factory Pack Quantity :
Subcategory
Hts Code
LoadingGif

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CXE-2089Z LINEAR GENERAL PURPOSE AMPLIFIER Package: SOT-89 Features 50MHz to 1000MHz Operation Internally Matched Input and Output 20dB Small Signal Gain 1.5dB Noise Figure +24dBm Output Power Single 5V to 9V Positive Power Supply Applications CATV Distribution Amplifiers Functional Block Diagram Cable Modems Product Description Broadband Gain Blocks The CXE-2089Z is a general purpose, low-cost, high-linearity RF amplifier Laser Diode Driver IC. The device is manufactured on a Gallium Arsenide process and is fea- tured in a small SOT-89 package. It has been designed for use as an easily Return Channel Amplifier cascadable 75 gain block with a noise figure of less than 2dB. Gain flat- Base Stations ness better than 0.5dB from 50MHz to 1000MHz, and high linearity make this part ideal for cable TV applications. Other applications include IF and RF amplification in wireless voice and data communication products oper- ating in the 50MHz to 1000MHz frequency range. The device is self-con- tained with 75 input and output impedances providing less than 2:1 VSWR matching. For higher input and output return losses, see the evalu- ation schematic. Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS BiFET HBT InGaP HBT SiGe HBT Si BJT LDMOS RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS 180525 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. 1 of 10CXE-2089Z Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Device Current 175 mA Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Device Voltage 9 V tions is not implied. Input RF Power +10 dBm The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Output Load VSWR 20:1 infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Ambient Operating Temperature -40 to +85* C RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. Storage Temperature -40 to +150 C RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric *Note: Case Temperature materials and red phosphorus as a flame retardant, and <2% antimony in solder. Specification Parameter Unit Condition Min. Typ. Max. o Electrical Characteristics T=25 C, V =7V, I =105mA, 75 System, DD DD P =-8dBm (75 ) IN Frequency Range 50 1000 MHz 3dB Bandwidth Gain 20 dB 50MHz to 1000MHz Gain Flatness +0.5 dB 50MHz to 1000MHz Reverse Isolation 24 dB 50MHz to 1000MHz Noise Figure 1.5 dB 500MHz 1.5 dB 50MHz to 1000MHz Output IP 38.5 dBm P =0dBm, 50MHz, 6MHz tone spacing 3 OUT 36 dBm P =0dBm, 500MHz, 6MHz tone spacing OUT 36 dBm P =0dBm, 1000MHz, 6MHz tone spacing OUT Output IP 50.1 dBm P =0dBm, 50MHz, 55.25MHz tone spacing 2 OUT 48 dBm P =0dBm, 500MHz, 55.25MHz tone spac- OUT ing 45 dBm P =0dBm, 1000MHz, 55.25MHz tone spac- OUT ing Output IP 23 dBm P =-8dBm, 50MHz 1dB IN 23 dBm P =-8dBm, 500MHz IN 22 dBm P =-8dBm, 1000MHz IN Input Return Loss 13 dB 50MHz to 1000MHz Output Return Loss 14 dB 50MHz to 1000MHz CSO 65 dBc 55.25MHz to 550MHz, 110 CH, Flat Tilt, +20dBmV out CTB 75 dBc 55.25MHz to 550MHz, 110 CH, Flat Tilt, +20dBmV out XMOD 80 dBc 55.25MHz to 550MHz, 110 CH, Flat Tilt, +20dBmV out Device Operating Voltage 678 V Device Operating Current 105 mA Thermal Resistance C/W Junction to lead 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 10 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. DS1 80525

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Qorvo
Qorvo, Inc.
RF9
RFMD
RFMD (Qorvo)
TriQuint
TriQuint (Qorvo)
TRIQUINT SEMI
TriQuint Semiconductor
TriQuint Semiconductor, Inc

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