Product Information

RFCA3310TR13

RFCA3310TR13 electronic component of Qorvo

Datasheet
RF Amplifier 50-1000MHz 75 Ohm High Gain 21dB

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

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Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 3.8221
25 : USD 2.8854
100 : USD 2.7216
250 : USD 2.5684
500 : USD 2.5321
N/A

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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Series
Test Frequency
Brand
Number Of Channels
Development Kit
Input Return Loss
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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RFCA3310 75 HIGH LINEARITY GaAs HBT MMIC AMPLIFIER Package Style: SOT-89 Features 8.5V Single Supply 5MHz to 2500MHz Operation Gain: 14.5dB at 500MHz OIP3: 42dBm at 500MHz Noise Figure: 3.7dB at 500MHz SOT-89 Package Applications CATV Distribution Amplifiers Cable Modems Functional Block Diagram Broadband Cable Blocks Product Description Laser Diode Driver RFMD s RFCA3310 is a low-cost 75 cascadable gain block MMIC amplifier. Its Return Channel Amplifier gain flatness and high linearity make it ideal for cable TV applications. The RFCA3310 is manufactured on a proven RFMD GaAs HBT process. Ordering Information RFCA3310SQ 25 piece sample bag RFCA3310SR 7 Sample reel with 100 pieces RFCA3310TR13 13 Reel with 2500 pieces RFCA3310PCK-410 5MHz to 2500MHz, PCBA with 5-piece sample bag Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS BiFET HBT InGaP HBT SiGe HBT Si BJT SOI RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2012, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS120723 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. 1 of 13RFCA3310 Absolute Maximum Ratings Parameter Rating Unit Caution ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may Max Device Current (I)170 mA D cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Max Device Voltage (V)9 V D tions is not implied. CW RF Input Power, 50 output VSWR 18 dBm The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Max Operating Junction Temp (T ) 165 C infringement of patents, or other rights of third parties, resulting from its use. No J license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- Operating Temperature Range (T )-40 to +85 C L cation circuitry and specifications at any time without prior notice. Storage Temperature -40 to +150 C RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free ESD Rating - Human Body Model Class 0 per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Moisture Sensitivity Level MSL2 Notes: 1. The maximum ratings must all be met simultaneously. 2. P = P + R - R DISS DC RFIN RFOUT 3. T = T + P * R J L DISS TH Specification Parameter Unit Condition Min. Typ. Max. Downstream Perfomance Overall 50MHz to 1000MHz Application, V = 8.5V, D I = 147mA, T = 25C, Z = Z = 75 (75 ) D L S L Frequency Range 50 1000 MHz Small Signal Gain at 50MHz 14.3 14.9 15.7 dB Small Signal Gain at 500MHz 14 14.5 15.4 dB Small Signal Gain at 1000MHz 13.6 14 15 dB Gain Flatness -0.9 -0.7 -0.3 dB P1dB 22 dBm Noise Figure 3.6 dB Input Return Loss 20 dB 50MHz 7.7 dB 1000MHz Output Return Loss 16 dB 50MHz 9 dB 1000MHz Stability Factor Conditional Stability 50 EVB and S-parameter calibration (see plot for details) Output IP3 41.5 45 dBm 50MHz, Tone spacing = 6MHz, P per OUT Tone = +5dBm 30 33.5 dBm 1000MHz, Tone spacing = 6MHz, P per OUT Tone = +5dBm Output IP2 66 dBm 50MHz, Tone spacing = 30MHz, P per OUT Tone = +0dBm 46.5 dBm 1000MHz, Tone spacing = 30MHz, P per OUT Tone = +0dBm CSO 63 dBc 79 Channels to 550MHz, +29dBmV out CTB 92 dBc XMOD 89 dBc 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 13 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. DS120723

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Qorvo
Qorvo, Inc.
RF9
RFMD
RFMD (Qorvo)
TriQuint
TriQuint (Qorvo)
TRIQUINT SEMI
TriQuint Semiconductor
TriQuint Semiconductor, Inc

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