Product Information

QPA2363CTR7

QPA2363CTR7 electronic component of Qorvo

Datasheet
RF Amplifier 50-4000MHz 3V SiGe Gn 12dB -40C +105C

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.67 ea
Line Total: USD 5.67

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 5.67
25 : USD 1.6466
100 : USD 1.3359
250 : USD 1.0874
500 : USD 0.901
1000 : USD 0.7643

     
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RoHS - XON
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QPA2363C 50 MHz4000MHz Active Bias Cascadable SiGe HBT Amplifier General Description Qorvos QPA2363C is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the QPA2363C does not require a dropping resistor as compared to typical Darlington amplifiers. The QPA2363C is designed for high linearity 3V gain block applications that 6 Lead SOT-363 Package require small size and minimal external components. It is internally matched to 50. Product Features Single Fixed 3V Supply No Dropping Resistor Required Patented Self-Bias Circuitry P1dB=+11.0dBm at 1950MHz OIP3=+22.6dBm at 1950MHz Robust 1000V ESD, Class 1C HBM Functional Block Diagram Applications Instrumentation Repeaters Boosters PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Top View Ordering Information Part No. Description QPA2363CTR7 3000 pieces on a 7 reel (standard) QPA2363CSQ 25 Piece Sample Bag QPA2363CSR 100 Pieces on 7 Reel QPA2363CPCK401 850MHz, EVB with 5 Piece Sample Bag Data Sheet, January 17, 2017 Subject to change without notice 1 of 7 www.qorvo.com QPA2363C 50 MHz 4000MHz Active Bias Cascadable SiGe HBT Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temp 55 to +150C Operating Temperature 40 +105 C Device Voltage (VD) +4 V Junction Temperature (T ) +125 C J Device Current (ID) 55 mA Device Operating Voltage +3.0 V RF Input Power +12 dBm Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating Exceeding any one or a combination of the Absolute Maximum Rating conditions. conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Conditions Min Typ Max Units 850 MHz 17.3 dB Small Signal Gain 1950 MHz 13.4 dB 2400 MHz 12.0 dB 850 MHz +12.7 dBm Output Power at 1dB Compression 1950 MHz +11.0 dBm 2400 MHz +9.6 dBm 850 MHz +23.2 dBm Output Third Intercept Point 1950 MHz +22.6 dBm 2400 MHz dBm +21.4 Input Return Loss 1950 MHz 16.3 dB Output Return Loss 1950 MHz 13.2 dB Noise Figure 1950 MHz 4.5 dB Device Operating Current 26 mA Thermal Resistance, jc 142 C/W Notes: 1. Test conditions unless otherwise noted: V = +3V, I = 26mA Typ., OIP3 Tone Spacing=1MHz, P per tone = -5dBm, 50 system, S D OUT Temp=+25C Data Sheet, January 17, 2017 Subject to change without notice 2 of 7 www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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