Product Information

QPA3333TR13

QPA3333TR13 electronic component of Qorvo

Datasheet
RF Amplifier CATV Amp MCM GaN 1.2GHz 28dB 1k pcs

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 32.5578 ea
Line Total: USD 32557.8

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1000
Multiples : 1000
1000 : USD 33.5596

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
Gain
Operating Supply Voltage
NF - Noise Figure
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Brand
Number Of Channels
Input Return Loss
Moisture Sensitive
Product Type
Factory Pack Quantity :
Subcategory
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QPA3333 45-1218 MHz GaAs/GaN Power Doubler Module Product Description QPA3333 The QPA3333 is a Power Doubler amplifier SMD Module. The part employs GaAs MESFET, GaAs pHEMT and GaN HEMT die and is operated from 45MHz to 1218MHz. It 9 pin, 11.0 mm x 8.5 mm x 1.375 mm package provides excellent linearity and superior return loss performance with low noise and optimal reliability. DC current of the device can be externally adjusted for optimum distortion performance versus power consumption Product Features over a wide range of output level. Excellent Linearity Superior Return Loss Performance Functional Block Diagram Extremely Low Distortion Current Temperature V+ Setting Sensing Optimal Reliability Low Noise Unconditionally Stable Under all Terminations INPUT OUTPUT 27.0dB Min Gain at 1218 MHz 470mA max at 24 VDC QPA3333 Applications 451218 MHz CATV Amplifier Systems Ordering Information Part No. Description QPA3333SB Sample bag 5 pcs QPA3333SR 7 Reel with 100 pcs QPA3333TR7 7 Reel with 500 pcs QPA3333PCBA-410 Fully assembled Evaluation Board Data Sheet Rev. D, October 2021 Subject to change without notice 1 of 9 www.qorvo.com QPA3333 Absolute Maximum Ratings Parameter Value/R ang e DC Supply over-voltage (5 minutes) +30V Storage Temperature -40 to +100 C Operating Mounting Base Temperature -30 to +100 C Moisture Sensitivity Level MSL3 260 C IPC/JEDEC J-STD-20 RF Input Voltage (single tone on 75dBmV Evaluation Board) Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Conditions (V+=24V, TMB=30C, ZS=ZL=75 Pin3 not Parameter Min Typ Max Units connected) Operational Frequency Range 45 1218 MHz Current (IDD) 450 470 mA Gain fo = 45 MHz 26.3 Gain fo = 1218 MHz 27.0 27.8 29.0 dB 1 Gain Slope 45 to 1218 MHz 1.4 Gain Flatness 45 to 1218 MHz 0.6 f = 45 to 320 MHz 20 o f = 320 to 640 MHz 19 o Input Return Loss (-S11) fo= 640 to 870 MHz 19 dB fo= 870 to 1003 MHz 17 fo= 1003 to 1218 MHz 16 fo= 45 to 320 MHz 20 f = 320 to 640 MHz 19 o Output Return Loss (-S ) f = 640 to 870 MHz 19 dB 22 o f = 870 to 1003 MHz 17 o fo= 1003 to 1218 MHz 16 Noise Figure fo= 50 to 1218 MHz 4.6 5.0 dB Thermal Resistance Junction to Mounting Base 3.6 K/W CTB -80 -76 dBc Vo = 58dBmV at 1218MHz, 16.5dB extrapolated tilt, XMOD -75 -70 dBc 79 analog channels plus 111 digital channels CSO 2,3 4 -74 -70 dBc (-6dB offset) , TCP = 70.0dBmV CIN 56 60 dB Notes: 1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +41.5dBmV to +48.5dBmV tilted output level, plus 111 digital channels, -6dB offset relative to the equivalent analog carrier. 3. Composite Second Order (CSO) The CSO parameter (both sum and difference products) is defined by ANSI/SCTE 6. Composite Triple Beat (CTB) The CTB parameter us defined by ANSI/SCTE6. Cross Modulation (XMOD) Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of carrier being tested, Carrier to Intermodulation Noise (CIN) The CIN parameter is defined by ANSI/SCTE17 (Test procedure for carrier to noise) 4. Total Composite Power Data Sheet Rev. D, October 2021 Subject to change without notice 2 of 9 www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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