Product Information

TQP0102

TQP0102 electronic component of Qorvo

Datasheet
RF Amplifier DC-4GHz 5W GaN Drain Eff. 68%

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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TQP0102
Qorvo

1 : USD 26.019
25 : USD 22.2681
100 : USD 19.4816
250 : USD 18.4154
500 : USD 17.3129
1000 : USD 16.1014
2500 : USD 15.2169
10000 : USD 14.8534
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Packaging
Brand
Moisture Sensitive
Product Type
Factory Pack Quantity :
Subcategory
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TQP0102 5 W, DC to 4 GHz, GaN Power Transistor Applications Small Cell Base Station Microcell Base Station Driver Active Antenna General Purpose Applications 16 Pin 3x3mm QFN Product Features Functional Block Diagram Operating Frequency Range: DC to 4 GHz Output Power (P ): 5 W SAT 16 15 14 13 Drain Efficiency: 68% Linear Gain: 19 dB 12 N/C N/C 1 Package Dimensions: 3 x 3 x 0.85 mm V , RF Out 2 11 V , RF In D G V , RF Out 3 10 D N/C N/C N/C 4 9 5 6 7 8 General Description Pin Configuration The TQP0102 is a wide band over-molded QFN discrete Pin No. Label GaN power amplifier. The device is a single stage 1, 3-9, 12-16 N/C unmatched power amplifier transistor. 2 RF IN, V G 10-11 RF OUT, V D The TQP0102 can be used in Doherty architecture for the Backside Paddle RF/DC GND final stage of a base station power amplifier for small cell applications. The TQP0102 can also be used in microcell and active antenna applications. The wide bandwidth of the TQP0102 makes it suitable for many different applications from DC to 4GHz. TQP0102 can deliver P of 5 W at 28 to 32 V operation. SAT Lead-free and ROHS compliant. Ordering Information Part No. ECCN Description TQP0102 EAR99 5 W, DC to 4 GHz, GaN PA TQP0102-PCB EAR99 2.5-2.7 GHz Evaluation Board Preliminary Datasheet: Rev E 09-28-15 - 1 of 10 - Disclaimer: Subject to change without notice 2014 TriQuint www.triquint.com N/C N/C N/C N/C N/C N/C N/C N/CTQP0102 5 W, DC to 4 GHz, GaN Power Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Gate Voltage (V ) 6 V Operating Temperature 40 +105 C G Drain Voltage (V ) +40 V Gate Voltage (V ) 2.9 V D G Drain Voltage (V ) 32 V Peak RF Input Power 29 dBm D VSWR Mismatch, P1dB Pulse (20% Quiescent Current (ICQ) 25 mA 10:1 duty cycle, 100 s width), T = 25C 6 T for >10 hours MTTF 225 C CH Storage Temperature 65 to +150C Electrical performance is measured under conditions noted in Operation of this device outside the parameter ranges the electrical specifications table. Specifications are not given above may cause permanent damage. guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: V = 2.67 V, V = 32 V, I = 25 mA, T = 25C, 2.6 GHz single-ended application circuit G D CQ Parameter Conditions Min Typ Max Units Frequency Range DC 4000 MHz Quiescent Current 20 25 30 mA Linear Gain POUT = 25 dBm, Pulsed (10% duty cycle, 100 s width) 17 19 dB P3dB Pulsed (10% duty cycle, 100 s width) 36.5 37 dBm Drain Efficiency P3dB 60 65 % Input Return Loss Measured in EVB 10 dB Preliminary Datasheet: Rev E 09-28-15 - 2 of 10 - Disclaimer: Subject to change without notice 2014 TriQuint www.triquint.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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