QPA9120TR7 Qorvo

QPA9120TR7 electronic component of Qorvo
QPA9120TR7 Qorvo
QPA9120TR7 RF Amplifier
QPA9120TR7  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of QPA9120TR7 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. QPA9120TR7 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

Part No. QPA9120TR7
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 1.8-5.0 GHz 2-stage wideband gain block
Datasheet: QPA9120TR7 Datasheet (PDF)
Price (USD)
1: USD 10.338 ea
Line Total: USD 10.34 
Availability : 0
  
QtyUnit Price
1$ 10.338
25$ 5.4577
100$ 4.4324
250$ 3.6039
500$ 2.9929
1000$ 2.4544
2500$ 2.268

Availability 0
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 10.338
25$ 5.4577
100$ 4.4324
250$ 3.6039
500$ 2.9929
1000$ 2.4544
2500$ 2.268

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Brand
Number Of Channels
Cnhts
Development Kit
Hts Code
Input Return Loss
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QPA9120TR7 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QPA9120TR7 and other electronic components in the RF Amplifier category and beyond.

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QPA9120 High Gain High Linearity Driver Amplifier Product Overview The QPA9120 is a wideband, high gain, and high linearity driver amplifier in a low-cost, RoHS compliant 3x3 mm QFN package. With Qorvos E-pHEMT process, this amplifier rd delivers exceptional performance with 36dBm output 3 order intercept (OIP3) power and 22dBm output 1dB compression (OP1dB) power while consuming less than 16 Pad 3x3mm QFN Package 100mA DC current with single 5V supply. The QPA9120 incorporates on-chip features with fast DC Key Features power shutdown, externally configurable device DC 1.85.0 GHz Operational operation current, and is internally matched. 50 Matched RF Input and Output The QPA9120 is targeted for use as a pre-driver amplifier 1 dB Gain Flatness over 1 GHz Bandwidth for wireless infrastructure where high linearity, medium RF +22 dBm P1dB power with efficient DC power operation are required. The +35dBm Output IP3 device is an excellent choice for 5G dense-array m-MIMO 29dB Gain radio applications. +5V Single Supply, IDD 96mA DC Power Shutdown Feature Small 3x3mm QFN Package Functional Block Diagram Applications 5G m-MIMO Mobile Infrastructure Repeater / DAS General Purpose Wireless TDD / FDD System Ordering Information Part No. Description QPA9120TR7 2,500 pieces on a 7 reel (standard) Top View QPA9120EVB-01 Evaluation Board Datasheet, March 29, 2019 Subject to change without notice 1 of 12 www.qorvo.com QPA9120 High Gain High Linearity Driver Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 65 to +150C Device Voltage (VDD1, VDD2) +3.3 +5.0 +5.25 V RF Input Power, CW, 50, T=25C 22 dBm TCASE 40 +105 C 6 Device Voltage (VDD1, VDD2) +6 V Tj for >10 hours MTTF +190 C Exceeding any one or a combination of the Absolute Maximum Rating Electrical specifications are measured at specified test conditions. conditions may cause permanent damage to the device. Extended Specifications are not guaranteed over all recommended operating application of Absolute Maximum Rating conditions to the device may conditions. reduce device reliability. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 1800 5000 MHz Gain At 3.5 GHz 27 29 33 dB At 4.8 GHz 26 28 32.5 dB Input Return Loss 10 dB Output Return Loss 12 dB Output P1dB At 3.5 GHz 20 22 dBm At 4.8 GHz 19 21 dBm Output IP3 Pout=+2dBm/tone, f=1MHz, 3.5 GHz 32 35 dBm Pout=+2dBm/tone, f=1MHz, 4.8 GHz 30 34 dBm Noise Figure At 3.5 GHz or 4.8 GHz 1.5 dB Device Current, ON VDD1 and VDD2 70 96 130 mA Device Current, OFF VPD = 0 V 2 mA V , Logic Low 0 0.63 V PD V , Logic High 1.17 V V PD DD Device ON or OFF Timing 10%-90% Rising or 90%-10% Falling 0.2 S Thermal Resistance, jc Junction to case 50.1 C/W Notes: 1. Test conditions unless otherwise noted: V and V on EVB = +5.0V, V = +1.8V, Temp=+25C, 50 system. DD1 DD PD Logic Table Parameter, V High Low PD Device State ON OFF Datasheet, March 29, 2019 Subject to change without notice 2 of 12 www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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