Product Information

QPB9319TR13

QPB9319TR13 electronic component of Qorvo

Datasheet
RF Front End 1.8-3.8 GHz FEM 2 stage LNA w/Switch

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 26.8272
25 : USD 20.79
100 : USD 16.7076
250 : USD 13.9644
500 : USD 12.744
1000 : USD 12.0204
2500 : USD 11.7936
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Operating Frequency
Operating Supply Voltage
Maximum Operating Temperature
Mounting Style
Package / Case
NF - Noise Figure
Operating Supply Current
Packaging
Series
Technology
Brand
Gain
Development Kit
Minimum Operating Temperature
Oip3 - Third Order Intercept
P1db - Compression Point
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
LoadingGif

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QPB9319 Dual-Channel Switch LNA Module Product Overview The QPB9319 is a highly integrated front-end module targeted for TDD base stations. The switch LNA module integrates a two-stage LNA and a high power switch in a dual channel configuration. The second stage LNA has integrated bypass mode. Power down and bypass capability for the LNAs can be controlled with control pins on the module. 44 Pin 7mmx7mm leadless SMT Package The QPB9319 can be utilized across the 1.84.2GHz range to provide 1.45dB noise figure for operation in the receive mode and 0.7dB insertion loss in the transmit mode Key Features at 2.7GHz. The LNAs utilize Qorvos high performance E- 1.8-4.2 GHz Frequency Range pHEMT process while the SOI technology based switch supports input RF power signals of 8W average power. The Dual Channel product only needs a +5V supply to operate the high power Second LNA has bypass mode switch and the LNAs. Pin (Tx path): 8W Pavg 37 dB Gain (Rx mode, High Gain state) The QPB9319 is packaged in a RoHS-compliant, compact 19 dB Gain (RX mode, Low Gain state) 7mm x 7mm surface-mount leadless package. The switch +34 dBm OIP3 (Rx mode, High gain state) LNA module is targeted for wireless infrastructure applications configured for TDD-based MIMO +29.5 dBm OIP3 (Rx mode, Low Gain state) architectures. The module can be used for next generation 1.8V TTL logic compatibility 5G or pre-5G solutions or small cell base-station 3-5V operation for switch and LNAs applications. Compact package size, 7x7 mm Functional Block Diagram Applications Wireless Infrastructure 1 33 GND GND Small cell BTS 2 32 ANT M AMP2VDD M 3 31 GND RXOUT M Pre-5G / 5G Massive MIMO systems 4 30 VCT M GND TDD-based architectures 5 29 GND BP M 6 28 GND SW VDD 7 27 GND BP D 8 26 VCT D GND 9 25 GND AMP2VDD D 10 24 ANT D RXOUT D GND 11 23 GND Ordering Information Part No. Description QPB9319EVB-01 Evaluation Board QPB9319SR 100 pcs on 13 reel Top View QPB9319TR13 2500 pcs on a 13 reel Data Sheet, May 1, 2018 Subject to change without notice 1 of 11 www.qorvo.com 12 44 GND GND 13 43 TERM M TERM D 14 42 GND GND 15 41 GND GND 16 40 GND GND 17 39 AMP1BIAS D AMP1BIAS M 18 38 GND GND 19 37 AMP1VDD D AMP1VDD M 20 36 GND GND 21 35 AMPSD D AMPSD M 22 34 GND GND QPB9319 Dual-Channel Switch LNA Module Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature -65 to 150C LNA Voltage +3 +5 +5.25 V Supply Voltage Switch V +3 +5 +5.5 V DD +7 V (Pins 17, 19, 25, 32, 37, 39) T 40 +105 C CASE Pin at ANT, Rx mode 27 dBm (Pavg, 8 dB PAR, 100% DC, 105C) (1) Tj at max T +136 C CASE Pin at ANT, Tx mode (2) Tj (>1e6 hrs MTTF condition) +125 C (Pavg, 8 dB PAR, 88% DC, 8.8ms max pulse- 39 dBm width, 105C) Notes: Operation of this device outside the parameter ranges given 1. For RX Mode operation above may cause permanent damage. 2. For TX Mode operation with 5W Pavg power in at 105C T . CASE Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 1800 4200 MHz Test Frequency 2700 MHz (2) Gain Rx mode, High Gain state 35 37 39 dB (2) Gain RX mode, Low Gain state 17 19 21 dB Gain Flatness Rx mode, Any 100 MHz BW within band 0.8 dB (2) Noise Figure Rx mode 1.45 1.7 dB Rx mode, High Gain state +30 +34 dBm Pout/tone = +3dBm, f = 1MHz Output IP3 Rx mode, Low Gain state +25 +29.5 dBm Pout/tone = +3dBm, f = 1MHz RX mode, High Gain state +17 +19 dBm (2) OP1dB RX mode, Low Gain state +12 +15 dBm (2) Insertion Loss Tx mode 0.72 1 dB Input Return Loss RX mode 12 dB Output Return Loss RX mode 6.5 dB Return Loss TX mode 25 dB Switch Isolation ANT to TX in RX mode >25 dB Switch Isolation ANT to RX in TX mode >60 dB Channel Isolation RX mode >40 dB Channel Isolation TX mode >40 dB LNA Supply Voltage +5 V LNA Current Rx mode, High gain state, Per channel 120 150 mA LNA Current Rx mode, Low gain state, Per channel 60 75 mA LNA Shutdown Current Per channel 6 mA Vlow 0 +0.63 V LNA and Switch Control Voltage (Pins 4,8,21,27,29,35) Vhigh +1.17 VDD V Switch Current Tx mode <0.5 mA ANT-TX rise time 890 ns ANT-TX fall time 780 ns Switch switching time ANT-RX rise time 980 ns ANT-RX fall time 610 ns Tx Mode 22.7 C/W Thermal Resistance Rx High Gain Mode 23 C/W Notes: 1. Test conditions unless otherwise noted: Temp=+25C, 50 system. 2. Trace loss de-embedded. Data Sheet, May 1, 2018 Subject to change without notice 2 of 11 www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Qorvo
Qorvo, Inc.
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RFMD
RFMD (Qorvo)
TriQuint
TriQuint (Qorvo)
TRIQUINT SEMI
TriQuint Semiconductor
TriQuint Semiconductor, Inc

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