Product Information

QPB9329TR13

QPB9329TR13 electronic component of Qorvo

Datasheet
RF Front End 3.8-5GHz FEM Dual Channel 3-5V

Manufacturer: Qorvo
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MOQ : 1
Multiples : 1
1 : USD 40.8114
25 : USD 28.8225
100 : USD 24.0732
250 : USD 20.1479
500 : USD 17.1554
1000 : USD 16.38
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Operating Frequency
Operating Supply Voltage
Maximum Operating Temperature
Mounting Style
Package / Case
NF - Noise Figure
Operating Supply Current
Packaging
Technology
Brand
Gain
Development Kit
Minimum Operating Temperature
Oip3 - Third Order Intercept
P1db - Compression Point
Product Type
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Subcategory
Hts Code
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QPB9329 Dual-Channel Switch LNA Module Product Overview The QPB9329 is a highly integrated front-end module targeted for TDD base stations. The switch LNA module integrates a two-stage LNA and a high power switch in a dual channel configuration. The second stage LNA has a bypass mode. Power down and bypass capability for the LNAs can be controlled with control pins on the module. 44 Pin 7mmx7mm leadless SMT Package The QPB9329 can be utilized across the 3.8 6.0 GHz range to provide 1.8dB noise figure for operation in the receive mode and 1.1dB insertion loss in the transmit mode at 4.5 GHz. The LNAs utilize Qorvos high performance E- Key Features pHEMT process while the SOI technology based switch 3.86.0 GHz Frequency Range supports input RF power signals of up to 8W average power assuming 8dB PAR. The product only needs a +5V supply Dual Channel to operate the high-power switch and the LNAs. Second LNA has bypass mode Max RF Input power: 8W Pavg (8 dB PAR), TX mode The QPB9329 is packaged in a RoHS-compliant, compact 1.8 dB NF at 4.5 GHz (Rx mode) 7mm x 7mm surface-mount leadless package. The switch 31.5 dB Gain (Rx mode, High Gain state) LNA module is targeted for wireless infrastructure 16.5 dB Gain (RX mode, Low Gain state) applications configured for TDD-based MIMO architectures. The module can be used for next generation +33 dBm OIP3 (Rx mode, High gain state) 5G or pre-5G solutions or small cell base-station 1.8V TTL logic compatibility applications. 35V operation for switch and LNAs Functional Block Diagram Applications Wireless Infrastructure 1 33 GND GND Small cell BTS 2 32 ANT M AMP2VDD M 3 31 GND RXOUT M Pre-5G / 5G Massive MIMO systems 4 30 VCT M GND TDD-based architectures 5 29 GND BP M 6 28 GND SW VDD 7 27 GND BP D 8 26 VCT D GND 9 25 GND AMP2VDD D 10 24 ANT D RXOUT D GND 11 23 GND Ordering Information Part No. Description QPB9329EVB-01 Evaluation Board QPB9329SR 100 pcs on a 7 reel Top View QPB9329TR13 2500 pcs on a 13 reel Data Sheet, September 20, 2018 Subject to change without notice 1 of 11 www.qorvo.com 12 44 GND GND 13 43 TERM M TERM D 14 42 GND GND 15 41 GND GND 16 40 GND GND 17 39 AMP1BIAS D AMP1BIAS M 18 38 GND GND 19 37 AMP1VDD D AMP1VDD M 20 36 GND GND 21 35 AMPSD D AMPSD M 22 34 GND GND QPB9329 Dual-Channel Switch LNA Module Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature -65 to 150C LNA Voltage +3 +5 +5.25 V Supply Voltage (Pins 17, 19, 25, 32, 37, 39) +7 V Switch VDD +3 +5 +5.5 V Pin at ANT, Rx mode T 40 +105 C CASE 27 dBm (Pavg, 8 dB PAR, 100% DC, 105C) (1) Tj at max Tcase +136 C Pin at ANT, Tx mode (2) Tj at max Tcase +125 C (Pavg, 8 dB PAR, 88% DC, 8.8ms max 39 dBm pulse-width, 105C) Notes: Operation of this device outside the parameter ranges given 1. For RX Mode operation 2. For TX Mode operation with 5W Pavg power in and >1e6hrs MTTF above may cause permanent damage. Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 3800 6000 MHz Test Frequency 4500 MHz (2) Gain Rx mode, High Gain state 28.5 31.5 33 dB (2) Gain RX mode, Low Gain state 15 16.5 18.5 dB Gain Flatness Rx mode, Any 100 MHz BW within band 0.8 1.5 dB (2) Noise Figure Rx mode 1.8 2.2 dB Rx mode, High Gain state +27.5 +33 dBm Pout/tone = +3dBm, f = 1MHz Output IP3 Rx mode, Low Gain state +27.5 +33.5 dBm Pout/tone = +3dBm, f = 1MHz RX mode, High Gain state +15 +16.5 dBm (2) OP1dB RX mode, Low Gain state +15 +18 dBm (2) Insertion Loss Tx mode 1.1 1.6 dB Input Return Loss RX mode 10 dB Output Return Loss RX mode 10 dB Return Loss TX mode 17 dB Switch Isolation ANT to TX in RX mode 25 dB Switch Isolation ANT to RX in TX mode 60 dB Channel Isolation ANT M/D to RX D/M 38 dB Channel Isolation TX-TX or RX-RX 40 dB LNA Current Rx mode, High gain state, Per channel 120 165 mA LNA Current Rx mode, Low gain state, Per channel 60 85 mA LNA Shutdown Current Per channel 6 9 mA Vlow 0 +0.63 V LNA and Switch Control Voltage (Pins 4,8,21,27,29,35) Vhigh +1.17 VDD V LNA & Switch Control pin current Logic high 1 A Switch Current Tx mode 0.5 mA ANT-TX rise time 0.89 1.05 s Switch switching time ANT-TX fall time 0.78 1 s (50% Vct to 90%/10% RFout) ANT-RX rise time 0.98 1.2 s ANT-RX fall time 0.61 1 s Tx Mode 22.7 C/W Thermal Resistance Rx High Gain Mode 23 C/W Notes: 1. Test conditions unless otherwise noted: V = +5V Temp=+25C, 50 system. DD 2. Trace loss de-embedded. Data Sheet, September 20, 2018 Subject to change without notice 2 of 11 www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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