QPD1008L 125W, 50V, DC 3.2 GHz, GaN RF Transistor General Description The QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz with a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited for military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operation. Lead-free and ROHS compliant Evaluation boards are available upon request. Product Features Frequency: DC to 3.2 GHz 1 Output Power (P3dB) : 162 W 1 Linear Gain : 17.5 dB 1 Typical DEFF3dB : 74% Operating Voltage: 50 V Low thermal resistance package Functional Block Diagram CW and Pulse capable Note: 1 2 GHz 2 Applications Military radar Civilian radar Land mobile and military radio communications Test instrumenation Wideband or narrowband amplifiers 1 Jammers Avionics Part No. Description QPD1008L DC3.2GHz RF Transistor QPD1008LPCB4B01 0.96 1.215 GHz EVB QPD1008LEVB2 1.1 1.5 GHz EVB Data Sheet Rev. I, October 2021 Subject to change without notice 1 of 20 www.qorvo.com QPD1008L 125W, 50V, DC 3.2 GHz, GaN RF Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Unit Drain to Gate Voltage (VDG) 145 V Drain Voltage (VD) +12 +48 +55 V Gate Voltage Range (VG) 7 to +2 V Carrier Gate Voltage (VG) 2.8 V RF Input Power, CW, 50, T = 25C 40 dB Carrier Quiescent Current (I ) 260 mA DQ1 Power Dissipation P See graph on page 5 DISS Operating Temperature Range 40 +25 +85 C Storage Temperature 65 to 150C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating Exceeding any one or a combination of the Absolute Maximum Rating conditions. conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Note: 1. To be adjusted to desired I DQ Electrical Characterization Symbol Parameter Min Typical Max Units Gate VD = +10 V, VG = 3.8 V 23.1 mA Leakage Data Sheet Rev. I, October 2021 Subject to change without notice 2 of 20 www.qorvo.com