Product Information

RF2370

RF2370 electronic component of Qorvo

Datasheet
AMP, RF, LNA, 1.5-3.8GHZ, 3V, 6SOT

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.953 ea
Line Total: USD 4.95

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

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RF2370
Qorvo

1 : USD 4.953
10 : USD 4.5006
100 : USD 3.6192

     
Manufacturer
Product Category
Frequency Min
Frequency Max
Gain
Noise Figure Typ
Rf Ic Case Style
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Supply Voltage Min
Supply Voltage Max
Operating Temperature Min
Operating Temperature Max
Packaging
Msl
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Rf Type
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RF2370 3V LOW NOISE AMPLIFIER Package Style: SOT 6-Lead Features Logic BIAS 1 6 GAIN SELECT Low Noise and High Intercept Control Point Adjustable Bias Current GND1 2 5 GND2 Power Down Control Low Insertion Loss Bypass RF IN 3 4 RF OUT Feature 1.8V to 5V Operation (See Note: Page 2) 1.5GHz to 3.8GHz Operation Applications WiFi LNA with Bypass Feature Functional Block Diagram CDMA PCS LNA with Bypass Product Description Feature The RF2370 is a switchable low noise amplifier with a very high dynamic MMDS LNA with Bypass Fea- range designed for digital cellular and WiFi applications. The device func- ture tions as an outstanding front end low noise amplifier. The bias current General Purpose Amplifica- may be set externally. The IC is featured in a standard SOT 6-lead plastic tion package. Commercial and Consumer Systems Ordering Information RF2370 Standard 25 piece bag RF2370SR Standard 100 piece reel RF2370TR7 Standard 2500 piece reel RF2370PCK-410 Fully assembled evaluation board tuned for 1900 to 4000 MHz and 5 loose sample pieces Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS InGaP HBT SiGe HBT Si BJT RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS110616 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 11RF2370 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Supply Voltage -0.5 to +6.0 V Exceeding any one or a combination of the Absolute Maximum Rating conditions may DC cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- Input RF Level +5 (see note) dBm mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. Current Drain, I 32 mA CC RoHS status based on EUDirective2002/95/EC (at time of this document revision). Operating Ambient Temperature -40 to +85 C The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Storage Temperature -40 to +150 C infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of NOTE: Exceeding any one or a combination of the above maximum rating lim- RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. its may cause permanent damage. Input RF transients to +15dBm will not harm the device. For sustained operation at inputs >+5dBm, a small dropping resistor is recommended in series with the V in order to limit the current due CC to self-biasing to <32mA. Specification Parameter Unit Condition Min. Typ. Max. Operating Range T =+25C, V =3.0V AMB CC Frequency Range 900 4000 MHz WiBRO/WiFi/WiMAX Low Noise Amplifier Frequency 2300 2700 MHz HIGH GAIN MODE Gain Select<0.8V, V =3V, T=+25C BIAS Gain 12.0 14.0 dB Noise Figure 1.3 1.5 dB Input IP3 +8 dBm IIP3 will improve if ICC is raised above 7mA. Output VSWR 1.7:1 2:1 Current Drain 7 mA Current Drain=I +I CC REF BYPASS MODE Gain Select>1.8V, V =0V BIAS Gain -4.0 -3.0 -2.0 dB Note: Bypass mode insertion loss will degrade gradually as V goes below 2.7V. CC Input IP3 +18.0 +20.0 dBm Output VSWR 1.6:1 Current Drain 2.9 3.0 mA Current Drain=I +I CC REF WiMAX Low Noise Amplifier Frequency 3100 3500 3800 MHz Gain 11 dB Gain Select<0.8V, V =3V BIAS Noise Figure 1.6 dB Input IP3 +14 dBm BYPASS MODE (Low Gain) Gain Select>1.8V, V =0V BIAS Gain -4 dBm Input IP3 +18 dBm GPS Low Noise Amplifier Frequency 1500 1575 1600 MHz Gain 17 dB Gain Select<0.8V, V =3V BIAS Noise Figure 1.2 dB Input IP3 +6 dBm 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 11 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS110616

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