Product Information

RF5373SR

RF5373SR electronic component of Qorvo

Datasheet
RF Amplifier 2.4-2.5GHz 1.8-3.3V Pout 19dBm

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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RF5373SR
Qorvo

1 : USD 3.9595
100 : USD 1.5315
N/A

Obsolete
     
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RoHS - XON
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Cnhts
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RF5373 1.8V TO 3.6V IEEE802.11b/g/n AND BLUETOOTH DRIVER/AMPLIFIER Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm Features 8 7 Single Power Supply 1.8V to 3.6V RF IN 1 6 N/C Very Low Current (see table for all modes) Bias DET >5dBm 11g P <1% and OUT 10dBm 11g P <4% N/C 2 5 RF OUT OUT P =19dBm Meeting Class 1 3 4 OUT BT Gain: 28dB Typ 11b/g/BT Applications IEEE802.11b/g/n Driver/Ampli- Functional Block Diagram fier Product Description General Purpose Amplification The RF5373 is a linear driver/amplifier that meets the FCC and ETSI Class 1 Bluetooth Power Ampli- requirements for operation in the 2.4GHz to 2.5GHz (IEEE802.11b/g/n fier and BT Class 1) bands. Operating from a single 1.8V to 3.6V supply, the Driver Amplifier for TX Power amplifier will easily be incorporated into WiFi designs with minimal exter- Amplifier nal components. The device is manufactured on an advanced InGaP Gal- lium Arsenide Heterojunction Bipolar Transistor (HBT) process. The device is provided in a 2.2mmx2.2mmx0.6mm, 8-pin, QFN with a backside ground. Ordering Information RF5373 Standard 25 piece bag RF5373SR Standard 100 piece reel RF5373TR7 Standard 2500 piece reel RF5373PCK-410 Fully assembled evaluation board tuned for 2.4GHz to 2.5GHz and 5 loose sample pieces Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS InGaP HBT SiGe HBT Si BJT RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS110618 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 13 NOT FOR NEW DESIGN VREG N/C PDETECT VCCRF5373 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Supply Voltage -0.5 to +3.6 V Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- DC Supply Current 90 mA mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RF - Input Power 15 dBm RoHS status based on EUDirective2002/95/EC (at time of this document revision). Operating Temperature -30 to +85 C The information in this publication is believed to be accurate and reliable. However, no Storage Temperature -40 to +100 C responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No Moisture Sensitivity JEDEC Level 3 license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. ESD Human Body Model 600 V (EIA/JESD22-114-A) ESD Machine Model (EIA/JESD22- 100 V 115-A) Specification Parameter Unit Condition Min. Typ. Max. Nominal conditions: V =3.1V, V =1.75V, CC REG IEEE802.11b Freq=2.45GHz, Temp=+25C, unless other- wise specified. Frequency 2.4 2.5 GHz Output Power 12 16 dBm Meeting IEEE802.11b spectral mask require- ments Gain 25 28 dB 2.4GHz to 2.5GHz Gain Variance Over Temperature 1.0 dB 2.4GHz to 2.5GHz -30C to +85C Second Harmonic -27 dBm Fundamental frequency is between 2400MHz to 2500MHz (RFP =+12dBm), see note 2 OUT 802.11b Adjacent Channel Power -38 -32 dBc P =12dBm at nominal conditions OUT Alternate Channel Power -56 -52 dBc P =12dBm at nominal conditions OUT IEEE802.11b Spectral Mask per -43 dBm Amplifier setup for best IEEE802.11g perfor- FCC Part 15.205 mance FC=2412MHz RFP =+12dBm OUT IEEE802.11b CCK 11Mbps modulation T=+25C measured at FC-25MHz -43 dBm Amplifier setup for best IEEE802.11g perfor- mance FC=2462MHz RFP =+12dBm OUT IEEE802.11b CCK 11Mbps modulation T=+25C measured at FC+25MHz Operating Current 50 mA P =12dBm at nominal conditions OUT Idle Current 45 mA At nominal conditions with no RF I Current 5.5 6.5 mA REG Shutdown Current 10 A Power Detector P =+10dBm 0.5 0.6 0.7 V OUT P =+12dBm 0.52 0.65 0.75 V OUT Input Capacitance 5 pF Bandwidth 8 MHz 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 13 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS110618 NOT FOR NEW DESIGN

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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