Product Information

RF5608TR13

RF5608TR13 electronic component of Qorvo

Datasheet
RF Front End 2.5 and 5 GHz

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 8.4919
250 : USD 5.9607
500 : USD 5.355
1000 : USD 4.6523
N/A

Obsolete
     
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RF5608 3.0V TO 3.6V, DUAL-BAND FRONT-END MODULE Package Style: 32-Pin, 5mmx5mmx0.9mm 32 31 30 29 28 27 26 25 SWTX 1 24 GND GND 2 23 RX5 Features PA5 Single-Module Radio Front-End ANT 3 22 PAEN5 Diplexer LNA5 Single Supply Voltage 3.0V to GND 4 21 LNAEN5 3.6V Integrated 2.5GHz & 5GHZ PAs, SWRX 5 20 LNAEN2 Diplexer LNA for both High and LNA2 GND 6 19 PAEN2 Low Band, Filters & Switches for TX & RX 7 PA2 18 RX2 P =18dBm, 11g, OFDM, <3% OUT EVM and P =16dBm, 11a, 8 17 GND OUT OFDM, <4% EVM 9 10 11 12 13 14 15 16 Applications Functional Block Diagram IEEE802.11a/b/g/n WiFi Appli- cations Product Description Single-Chip RF Front-End Module The RF5608 is a single-chip dual-band integrated front-end module (FEM) for high-performance 2.5GHz and 5GHz ISM Bands WiFi applications in the 2.5GHz and 5GHz ISM bands. The RF5608 addresses the need for Applications aggressive size reduction for a typical 802.11a/b/g RF front-end design and greatly reduces the number of components outside of the core chipset therefore minimizing the footprint and WiFi Systems assembly cost of the overall 802.11a/b/g solution. The FEM contains integrated power amplifi- ers for 2.5GHz and 5GHz, TX/RX switch for each band, low noise amplifier for the 5.0GHz Portable Battery-Powered Equip- receive band, matching components, bypass capacitors, built-in power detector for both bands, ment and band pass filters for both transmit paths and some filtering for both receive paths. The device is manufactured on lead frame with InGap HBT and pHEMT processes. The RF5608 module is a 5mmx5mmx0.9mm package with 32-pins and a backside ground. The RF5608 greatly minimizes next level board space and allows for simplified integration. Ordering Information RF5608SQ Standard 25 piece bag RF5608SR Standard 100 piece reel RF5608TR13 Standard 2500 piece reel RF5608PCK-410 Fully Assembled Evaluation Board with 5 Loose Sample Pieces Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS RF MEMS InGaP HBT SiGe HBT Si BJT LDMOS RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS110619 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 15 PDET2 VCC GND PDET5 VCC GND VCC VCC VCC VCC GND VCC GND GND TX2 IN TX5 INRF5608 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Supply Voltage -0.3 to +5.4 V Exceeding any one or a combination of the Absolute Maximum Rating conditions may DC cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- Power Control Voltage (V ) -0.5 to +3.5 V REG mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. DC Supply Current 400 mA RoHS status based on EUDirective2002/95/EC (at time of this document revision). Input RF Power 0 dBm The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Operating Ambient Temperature 0 to +70 C infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Reduced Performance Temps -30 to 0 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. +70 to +85 C Storage Temperature -40 to +150 C Moisture Sensitivity JEDEC Level TBD Specification Parameter Unit Condition Min. Typ. Max. 2.4 2.5 GHz Nominal Conditions: T=+25C, V (b/g)=3.3V, PA EN g =2.85V, Freq =2.4 GHz 2.4GHz Transmit CC to 2.5GHz, unless otherwise noted. Compliance IEEE802.11b, IEEE802.11g FCC CFR 15.247, 0.205, 0.209 Output Power 11g 16.5 18 dBm With a standard IEEE802.11g waveform, OFDM, 54Mbps, 64 QAM, over temperature range -30C to +85C, and V =3.0V to 3.6V CC EVM RMS, mean with a standard IEEE802.11g waveform, OFDM, 54Mbps, 64 QAM at 11g rated output power over temperature range -30C to +85C and V =3.0V to 3.6V CC P =18dBm 3 4.5 % OUT P =14dBm 2 2.5 % OUT Output Power 11b 20 21 dBm With a standard IEEE802.11b waveform, over temperature range -30C to +85C, and over V =3.0V to 3.6V CC Adjacent Channel Power At 11b rated output power with 1Mbps and 11Mbps 11b waveform over temperature range -30C to +85C, and over V =3.0V to CC 3.6V ACP1 -38 -30 dBc ACP2 -56 -50 dBc Gain 25 27 dB Gain Variance -2.5 +2.5 dB Over Temperature range -10C to +70C and over Frequency Power Detect Voltage Range 0.8 0.95 1.2 V At 20dBm 0.2 0.25 0.35 V At 10dBm P OUT Output Resistance 10 k Output Capacitance 10 pF Power Detector Accuracy -1.5 +1.5 dB Into 3:1 VSWR Sensitivity >14dBm 75 mV/dB 0<P <14dBm 25 mV/dB OUT 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 15 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS110619

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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