SBA5086Z SBA5086Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-86 Product Description Features RFMDs SBA5086Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran- IP3=34.0dBm at 1950MHz sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech- P =13.3dBm at -45dBc OUT nology provides broadband performance up to 5GHz with excellent thermal ACP IS-95 1950MHz performance. The heterojunction increases breakdown voltage and minimizes leak- age current between junctions. Cancellation of emitter junction non-linearities Robust 1000V ESD, Class 1C results in higher suppression of intermodulation products. Only a single positive Operates From Single Supply supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke Patented Thermal Design are required for operation. Optimum Technology Applications Matching Applied Gain & Return Loss GaAs HBT 25 PA Driver Amplifier GaAs MESFET 20 Cellular, PCS, GSM, UMTS S21 InGaP HBT 15 10 SiGe BiCMOS IF Amplifier 5 Si BiCMOS Wireless Data, Satellite 0 SiGe HBT Terminals -5 GaAs pHEMT -10 S11 Si CMOS -15 Si BJT -20 S22 GaN HEMT -25 InP HBT -30 00.511.5 22.5 3 3.5 4 4.5 5 5.5 6 Frequency (GHz) RF MEMS LDMOS Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 17.5 19.0 20.5 dB 850MHz 15.7 17.2 18.7 dB 1950MHz Output Power at 1dB Compression 19.5 dBm 850MHz 18 19.5 dBm 1950MHz Output Third Order Intercept Point 36.9 dBm 850MHz 32.0 34.0 dBm 1950MHz Output Power 13.3 dBm 1950MHz, -45dBc ACP IS-95 9 Forward Channels Bandwidth 5000 MHz Return Loss >10dB Input Return Loss 11.0 13.0 dB 1950MHz Output Return Loss 14.0 19.0 dB 1950MHz Noise Figure 4.5 5.5 dB 1950MHz Device Operating Voltage 4.7 4.9 5.3 V Device Operating Current 72 80 88 mA Thermal Resistance (junction to lead) 102 C/W Test Conditions: V =8V, I =80mA Typ., OIP Tone Spacing=1MHz, P per tone=0dBm, R =39 , T =25C, Z =Z =50 S D 3 OUT BIAS L S L RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS110722 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 6SBA5086Z Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may Device Current (I)130 mA cause permanent damage to the device. Extended application of Absolute Maximum D Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Device Voltage (V)6 V D tions is not implied. RF Input Power +17 dBm The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Junction Temp (T)+150 C J infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Operating Temp Range (T ) -40 to +85 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- L cation circuitry and specifications at any time without prior notice. Storage Temp +150 C RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric Operating Dissipated Power 0.65 W materials and red phosphorus as a flame retardant, and <2% antimony in solder. Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , j-l and T =T D D J L TH L LEAD Typical Performance at Key Operating Frequencies Parameter Unit 100MHz 500MHz 850MHz 1950MHz 2400MHz 3500MHz Small Signal Gain dB 20.4 20.1 19.0 17.2 15.8 13.7 Output Third Order Intercept dBm 36.4 36.2 36.9 34.0 33.7 30.8 Point Output Power at 1dB dBm 19.8 19.7 19.5 19.5 18.7 17.1 Compression Input Return Loss dB 31 20 17.5 13.0 12.9 12.4 Output Return Loss dB 26 26 25 19.0 19 18.7 Reverse Isolation dB 22.5 22.8 23 23 23 23 Noise Figure dB 4.2 4.5 4.2 4.4 - - Test Conditions: V =8V, I =80mA Typ., OIP Tone Spacing=1MHz, P per tone=0dBm, R =39 , T =25C, Z =Z =50 S D 3 OUT BIAS L S L NF vs Frequency OIP3 vs Frequency 7.00 40 6.50 38 6.00 36 5.50 34 5.00 32 4.50 4.00 30 3.50 28 3.00 26 +25c +25c 2.50 -40c -40c 24 2.00 +85c +85c 22 1.50 1.00 20 00.5 11.522.5 33.5 0 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) Frequency (GHz) P1dB vs Frequency 21 19 17 15 +25c -40c 13 +85c 11 00.5 11.5 22.5 33.5 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 6 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS110722 dB dBm IP3 (dB)