Product Information

SGC2463Z

SGC2463Z electronic component of Qorvo

Datasheet
RF Amplifier .05-4GHz SSG 14.4dB NF 3.5dB SiGe

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock


Multiples : 1

Stock Image

SGC2463Z
Qorvo

N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Frequency Range
Brand
Number Of Channels
Input Return Loss
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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SGC2463Z SGC2463Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMDs SGC2463Z is a high performance SiGe HBT MMIC amplifier utiliz- Single Fixed 3V Supply ing a Darlington configuration with a patented active bias network. The No Dropping Resistor active bias network provides stable current over temperature and process Required Beta variations. Designed to run directly from a 3V supply, the SGC2463Z Patented Self-Bias Circuitry does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC2463Z is designed for high linearity 3V gain block P =10.5dBm at 1950MHz 1dB applications that require small size and minimal external components. It is OIP =23.5dBm at 1950MHz internally matched to 50 . 3 Robust 1000V ESD, Class 1C Optimum Technology Gain & Return Loss V = 3V, I = 25mA D D HBM Matching Applied 30 GaAs HBT S21 Applications 20 GaAs MESFET PA Driver Amplifier InGaP HBT 10 SiGe BiCMOS Cellular, PCS, GSM, UMTS, Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C 0 WCDMA Si BiCMOS SiGe HBT S22 IF Amplifier -10 GaAs pHEMT Wireless Data, Satellite S11 -20 Si CMOS Si BJT -30 GaN HEMT 00.511.5 2 2.5 3 3.5 4 Frequency (GHz) RF MEMS Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 17.4 19.8 21.3 dB 850MHz 12.9 14.4 15.9 dB 1950MHz 13.4 dB 2400MHz Output Power at 1dB Compression 10.5 dBm 850MHz 9.5 10.5 dBm 1950MHz 9.9 dBm 2400MHz Output Third Order Intercept Point 22.5 dBm 850MHz 21.5 23.5 dBm 1950MHz 24.0 dBm 2400MHz Input Return Loss 10.0 14.0 dB 1950MHz Output Return Loss 8.5 12.5 dB 1950MHz Noise Figure 3.5 4.5 dB 1930MHz Thermal Resistance 255 C/W junction - lead Device Operating Voltage 3.0 V Device Operating Current 22.0 26.0 30.0 mA Test Conditions: V =3V, I =26mA Typ., OIP Tone Spacing=1MHz, P per tone=-5dBm, T =25C, Z =Z =50 D D 3 OUT L S L RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS140429 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 7 Gain, RL (dB)SGC2463Z = Absolute Maximum Ratings Parameter Rating Unit Device Current (I)55 mA CE Device Voltage (V)4 V CE RF Input Power* (See Note) 12 dBm Junction Temp (T)+150 C J Operating Temp Range (T ) -55 to +105 C L Storage Temp +150 C ESD Rating - Human Body Model Class 1C (HBM) Moisture Sensitivity Level MSL 1 *Note: Load condition Z =50 L Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , j-l and T =T D D J L TH L LEAD Typical RF Performance with Application Circuit at Key Operating Frequencies (Bias Tees) Parameter Unit 100 500 850 1950 2400 3500 MHz MHz MHz MHz MHz MHz Small Signal Gain (G) dB 21.7 21.4 19.8 14.4 13.4 10.6 Output Third Order Intercept Point (OIP ) dBm 22.5 22.5 22.5 23.5 24.0 22.5 3 Output Power at 1dB Compression (P ) 14.0 10.9 10.5 10.5 9.9 8.6 8.6 1dB Input Return Loss (IRL) dB 15.0 12.0 11.5 14.0 14.5 13.0 Output Return Loss (ORL) dB 15.0 12.0 11.0 12.5 11.5 12.0 Reverse Isolation (S ) dB 23.5 25.0 25.0 21.0 20.0 19.0 12 Noise Figure (NF) dB 2.8 2.8 3.1 3.5 3.6 4.4 Test Conditions: V =3V I =25mA Typ. OIP Tone Spacing=1MHz, P per tone=-5dBm D D 3 OUT T =25C Z =Z =50 L S L Typical Performance with Bias Tee, V =3V, I =25mA D D OIP3 vs. Frequency (-5dBm/tone, 1MHz spacing) P1dB vs. Frequency 15 28 13 26 11 24 9 22 25C 25C -40C 7 85C -40C 20 85C 5 18 00.5 11.522.5 33.5 00.5 11.5 22.5 3 3.5 Frequency (GHz) Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 7 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS140429 OIP3 (dBm) P1dB (dBm)

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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