TAT7466 75 RF Amplifier Applications Replacement for 5 V SOIC-8 amplifiers Multi-Dwelling Units Edge QAM gain stage SOIC-8 package Product Features Functional Block Diagram 75 , 50-1000 MHz Bandwidth 4.0 dB Noise Figure up to 1000 MHz Adjustable low power consumption RF IN RF OUT 11 88 5 V supply voltage 22 77 SOIC-8 package 33 66 44 55 RF IN RF OUT General Description Pin Configuration The TAT7466 is a 75 RF Amplifier designed for use up Pin Symbol to 1000 MHz. The TAT7466 contains two separate 1 RF IN amplifiers for push pull applications. It is fabricated using 2, 3, 6, 7 No Connect 6-inch GaAs pHEMT technology to optimize performance 4 RF IN and cost. Each amplifier contains on-chip active biasing. 5 RF OUT The bias current set point of each amplifier is adjustable 8 RF OUT with a single resistor from the input to ground. The Exposed Slug GND PADDLE TAT7466 may be flexibly configured for 6 V higher gain applications using external 2:1 transformers, or for direct replacement of familiar 5 V SOIC-8 amplifiers using a 1:1 balun. Ordering Information Part No. Description 75 RF Amplifier TAT7466 (lead-free/RoHS compliant SOIC-8 Pkg) Amplifier Evaluation Board TAT7466-EB (Evaluation board is the 2:1 Push Pull design) Standard T/R size = 1000 pieces on a 7 reel. Preliminary Data Sheet: Rev B 12/08/10 - 1 of 11 - Disclaimer: Subject to change without noticee Connecting the Digital World to the Global Network 2010 TriQuint Semiconductor, Inc. TAT7466 75 RF Amplifier Specifications 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units o Operating Temperature -40 to 85 C V V DD o Storage Temperature -65 to +150 C I mA DD o 6 Device Voltage +10 V T (for > 10 hours MTTF) 150 C J Notes: Electrical specifications are measured at specified test conditions. 1. Operation of this device outside the parameter ranges Specifications are not guaranteed over all recommended operating given above may cause permanent damage. conditions Electrical Specifications Test conditions unless otherwise noted: 25 C, +6 V V , Push Pull Application Circuit with 2:1 Transformers DD Parameter Typical Typical Per Frequency Units Band 50 250 450 860 1000 MHz Gain 15.0 14.4 14.0 13.2 13.0 dB Gain Flatness 0.5 +/-dB Noise Figure 2.6 2.9 3.3 4.0 4.3 dB Input Return Loss 16 dB Output Return Loss 20 dB 1 CSO -80 dBc 1 CTB -67 dBc 2 I 190 mA DD o Thermal Resistance 31.5 C/W (jnc. to case) jc Notes: 1. 39 dBmV/ch at output, 80 ch flat 2. R = 5.0 k BIAS Preliminary Data Sheet: Rev B 12/08/10 - 2 of 11 - Disclaimer: Subject to change without noticee Connecting the Digital World to the Global Network 2010 TriQuint Semiconductor, Inc.