DocumentNumber:MMG3003NT1 FreescaleSemiconductor Rev. 9, 9/2014 Technical Data HeterojunctionBipolarTransistor Technology(InGaPHBT) MMG3003NT1 BroadbandHighLinearity Amplifier The MMG3003NT1is ageneral purposeamplifier thatis internally input matched and internally output prematched. It is designed for a broad range ofClassA, small--signal,highlinearity,generalpurposeapplications. Itis suitableforapplications withfrequencies from40to3600MHz suchas cellular,PCS,BWA,WLL,PHS,CATV,VHF,UHF,UMTSandgeneral 40--3600MHz, 20dB small--signal RF. 24dBm Features InGaPHBTGPA Frequency: 40--3600 MHz P1dB: 24dBm 900MHz Small--Signal Gain: 20 dB 900 MHz ThirdOrder Output Intercept Point: 40.5dBm 900MHz Single Voltage Supply Internally Matchedto50Ohms Cost--effectiveSOT--89SurfaceMount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. SOT--89 (1) Table1.TypicalPerformance Table2. MaximumRatings 900 2140 3500 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 7 V CC Small--SignalGain G 20 16.9 12 dB p Supply Current I 400 mA CC (S21) RFInput Power P 15 dBm in Input Return Loss IRL --15 --14.1 --11.2 dB Storage Temperature Range T --65to+150 C (S11) stg Junction Temperature T 175 C Output Return Loss ORL --9.3 --14.5 --10.2 dB J (S22) PowerOutput 1dB P1dB 24 23.3 20.5 dBm Compression Third OrderOutput OIP3 40.5 40 37 dBm Intercept Point 1. V =6.2Vdc,T =25 C, 50ohm system. CC A Table3. Thermal Characteristics (2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 31.6 C/W JC Case Temperature 109C, 6.2 Vdc, 180 mA, no RFapplied 2. Referto AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4. Electrical Characteristics (V =6.2Vdc,900MHz,T =25 C, 50ohm system, inFreescaleApplicationCircuit) CC A Characteristic Symbol Min Typ Max Unit Small--SignalGain (S21) G 19.3 20 dB p Input Return Loss (S11) IRL --15 dB Output Return Loss (S22) ORL --9.3 dB PowerOutput 1dB Compression P1dB 24 dBm Third OrderOutput Intercept Point OIP3 40.5 dBm Noise Figure NF 4 dB Supply Current I 160 180 205 mA CC Supply Voltage V 6.2 V CC Table5.FunctionalPinDescription 2 Pin Number PinFunction 1 RF in 2 Ground 3 RF /DC Supply out 1 2 3 Figure1.FunctionalDiagram Table6. ESD Protection Characteristics TestConditions/TestMethodology Class Human Body Model(perJESD22--A114) 1B MachineModel(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) IV Table7. MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 1 260 C MMG3003NT1 RF DeviceData Freescale Semiconductor, Inc. 2