Advance Product Information July 14, 2005 X-Band Low Noise Amplifier TGA2511 Key Features Typical Frequency Range: 6 - 14 GHz 1.3 dB Nominal Noise Figure 20 dB Nominal Gain Bias: 5 V, 160 mA Gate Bias 5 V, 80 mA Self Bias 0.15 um 3MI pHEMT Technology Chip Dimensions 2.05 x 1.20 x 0.10 mm (0.081 x 0.047 x 0.004 in) Product Description Primary Applications X-Band Radar The TriQuint TGA2511 is a wideband LNA with AGC amplifier for EW, ECM, and RADAR EW, ECM receiver or driver amplifier applications. Point-to-Point Radio Offering high gain 20dB typical from 6-14GHz, the TGA2511provides excellent noise performance with typical midband NF 1.3dB, Measured Fixtured Data while the balanced topology offers good return Bias Conditions: Gate Bias Vd = 5 V, Id = 160 mA loss typically 15dB. 30 GAIN The TGA2511 is designed for maximum ease 20 of use. The large input FETs can handle up to 21dBm input power reliably. The part is also 10 assembled in self-biased mode, using a single +5V supply connection from either side of the 0 chip, or in gate biased mode, allowing the user IRL ORL -10 to control the current for a particular applications. -20 In self-biased mode the TGA2511 offers 6dBm -30 typical P1dB, while in gate-biased mode the 4 6 8 1012 14 1618 typical P1dB is over 12dBm. The small size of Frequency (GHz) 2 2.46mm allows ease of compaction into Multi- Chip-Modules (MCMs). 5 The TGA2511 is 100% DC and RF tested on- 4 wafer to ensure performance compliance. 3 Lead-Free & RoHS compliant. 2 1 0 4 6 8 1012141618 Frequency (GHz) Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw tqs.com Web: www.triquint.com S-Parameter (dB) Noise Figure (dB)Advance Product Information July 14, 2005 TGA2511 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES Vd Drain Voltage 3.5 + (0.0125)(Id) V 2/ 3/ Vg Gate Voltage Range -1 TO +0.5 V Id Drain Current (gate biased) 240 mA 2/ 4/ Ig Gate Current 14 mA 4/ P Input Continuous Wave Power 21 dBm IN P Power Dissipation See note 5/ 2/ D 0 T Operating Channel Temperature 117 C6/ 7/ CH 0 T Mounting Temperature (30 Seconds) 320 C M 0 T Storage Temperature -65 to 150 C STG 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P . D 3/ Unit for Id is A 4/ Total current for the entire MMIC. 5/ For a median life time of 1E+6 hrs, Power dissipation is limited to: 0 0 0 P (max) = (117 C T C) / T ( C/W) D BASE JC Where T is the base plate temperature, T is on Table IV. JC BASE 6/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possibl levels. 7/ These ratings apply to each individual FET. TABLE II DC PROBE TESTS 0 (Ta = 25 C, Nominal) SYMBOL PARAMETER MIN. TYP. MAX. UNITS Breakdown Voltage Gate- V -30 -5 V BVGS, Q1 Source V Pinch-Off Voltage -0.7 -0.1 V P, Q1,2,5,6 Q1, Q2, Q5, Q6 are 400 um FET. 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw tqs.com Web: www.triquint.com