Product Data Sheet August 5, 2008 60GHz Low Noise Amplifier TGA4600 Key Features Typical Frequency Range: 57 - 65 GHz 4 dB Nominal Noise Figure 13 dB Nominal Gain Bias 3.0 V, 41 mA 0.15 um 3MI pHEMT Technology Chip Dimensions 1.62 x 0.84 x 0.10 mm (0.064 x 0.033 x 0.004 in) RF Probe Data Primary Applications Bias Conditions: Vd = 3.0 V, Id =41 mA Wireless LAN 15 Point-to-Point Radio GAIN 10 5 0 ORL -5 -10 IRL -15 -20 -25 -30 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 Frequency (GHz) 8 7 6 5 4 3 2 1 0 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 Frequency (GHz) Note: Datasheet is subject to change without notice. 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw tqs.com Web: www.triquint.com Small Signal (dB) Noise Figure (dB)Product Data Sheet August 5, 2008 TGA4600 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES Vd Drain Voltage 5 V 2/ Vg Gate Voltage Range -1 TO +0.5 V Id Drain Current 200 mA 2/ 3/ Ig Gate Current 5 mA 3/ P Input Continuous Wave Power 15 dBm IN P Power Dissipation 0.39W 2/ 4/ D 0 T Operating Channel Temperature 150 C5/ 6/ CH 0 T Mounting Temperature (30 Seconds) 320 C M 0 T Storage Temperature -65 to 150 C STG 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P . D 3/ Total current for the entire MMIC. 0 4/ When operated at this bias condition with a base plate temperature of 70 C, the median life is 1.0E+6 hrs. 5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. TABLE II DC PROBE TESTS 0 (Ta = 25 C, Nominal) SYMBOL PARAMETER MIN. TYP. MAX. UNITS Breakdown Voltage Gate-Source V -30 -5 V BVGD, Q1-Q3 Breakdown Voltage Gate-Source V -30 -5 V BVGS, Q3 Pinch-off Voltage V -1.0 -0.1 V P, Q1,2,3 Q1 is 100 um FET, Q2 is 100 um FET, Q3 is 210 um FET. 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw tqs.com Web: www.triquint.com