Product Information

TGF2934

TGF2934 electronic component of Qorvo

Datasheet
RF JFET Transistors DC-25GHz 14Watt NF 1.5dB GaN

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

TGF2934
Qorvo

1 : USD 107.7413
25 : USD 73.5313
100 : USD 53.3032
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Maximum Drain Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Packaging
Application
Configuration
Series
Brand
Forward Transconductance - Min
Nf - Noise Figure
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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TGF2934 DC 25 GHz, 28 V, 14 W GaN RF Transistor Product Overview The Qorvo TGF2934 is a 14 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvos proven QGaN15 process. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant 1.457 x0.551x0.100mm Key Features Frequency: DC to 25 GHz 1 Output Power (P ) : 14 W 3dB Functional Block Diagram 1 Linear Gain : 14 dB 1 Typical PAE : 49% 3dB 2 1 Typical Noise Figure : 1.5 dB Operating Voltage: 28 V CW and Pulse capable Non-linear & Noise Models available Note 1: 10 GHz 1 Applications Defense and Aerospace Broadband wireless Low noise amplifier 3, GND Ordering info Part No. ECCN Description DC25GHz, 28 V, 3.5 W GaN RF TGF2934 3A001b.3.b Transistor Datasheet Rev. A, August 09, 2016 Subject to change without notice - 1 of 24 - www.qorvo.com TGF2934 DC 25 GHz, 28 V, 14 W GaN RF Transistor 1 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Units Operating Temp. Range 40 +25 +85 C Breakdown Voltage,BVDG +60 V Drain Voltage Range, V +12 +20 +29.5 V D Gate Voltage Range, VG -7 to +1.5 V Drain Bias Current, IDQ 80 160 320 mA Drain Current, I 4 A DMAX Drain Current, I 1000 mA D Gate Current Range, IG See page 20. mA 3 Gate Voltage, VG 2.8 V 2 Power Dissipation, CW, P 17.4 W DISS Channel Temperature (TCH) 250 C RF Input Power, CW, 10 GHz, +33 dBm 2 Power Dissipation, CW (P ) 15.8 W D T = 25C Channel Temperature, T 275 C Notes: CH 1. Electrical performance is measured under conditions noted Mounting Temperature in the electrical specifications table. Specifications are not 320 C (30Seconds) guaranteed over all recommended operating conditions. Storage Temperature 65 to +150 C 2. Package base at 85 C 3. To be adjusted to desired IDQ Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage. 2. Base temperature at 85 C Datasheet Rev. A, August 09, 2016 Subject to change without notice - 2 of 24 - www.qorvo.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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