TGF3015-SM 10 W, 32 V, 0.03 3 GHz, GaN RF Input-Matched Transistor Product Overview The Qorvo TGF3015-SM is a 10W (P3dB), 50-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3 x 3 mm package that saves real estate in space-constrained handheld radios. Lead-free and ROHS compliant Evaluation boards are available upon request. Key Features Frequency: 30 MHz to 3.0 GHz Output Power (P ): 11 W at 2.4 GHz 3dB Functional Block Diagram Linear Gain: 17.1 dB at 2.4 GHz Typical PAE3dB: 62.7% at 2.4 GHz Operating Voltage: 32 V Low thermal resistance package CW and Pulse capable 3 x 3 mm package Applications Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Ordering info Pin Configuration Pin No. Label Part No. Description 9 - 12 V / RF OUT TGF3015-SM QFN Packaged Part D 3 VG / RF IN TGF3015-SMEVB1 0.5 3 GHz EVB 6 Off-chip Shunt Cap for Low-Frequency Gain Back side Source Datasheet Rev. C, Oct 12, 2020 Subject to change without notice - 1 of 20- www.qorvo.com TGF3015-SM 10 W, 32 V, 0.03 3 GHz, GaN RF Input-Matched Transistor 1, 2, 3 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Units Gate Voltage, V 2.7 V Breakdown Voltage,BV 100 V G DG Drain Voltage Range, VD 32 V Gate Voltage Range, VG 50 to 0 V Drain Current, IDMAX 1.5 A Drain Bias Current, I 50 mA DQ Gate Current Range, I 2.5 to 4.2 mA G Power Dissipation, Pulsed, Notes: 15 W 2 P DISS 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not RF Input Power, CW, 27.5 dBm guaranteed over all recommended operating conditions T = 25C (P ) IN Mounting Temperature 320 C (30Seconds) Storage Temperature 40 to +150 C Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage 2. Pulsed, 100us PW, 20% DC, Package base at 85 C 3. Pulsed, 100us PW, 20% DC, T = 25 C 1 RF Characterization Load Pull Performance at 1.0 GHz Parameter Min Typ Max Units Linear Gain, GLIN 16.2 dB Output Power at 3dB compression point, P 40.2 dBm 3dB Power-Added Efficiency at 3 dB Gain Compression, 70.9 % Efficiency Tuned, PAE3dB Gain at 3dB compression point, G3dB 13.2 dB Notes: 1. VD = 32V, IDQ = 50mA, TA = 25C, Pulse Width = 100 us, Duty Cycle = 20% 1 RF Characterization Load Pull Performance at 2.0 GHz Parameter Min Typ Max Units Linear Gain, GLIN 16.5 dB Output Power at 3dB compression point, P 40.6 dBm 3dB Power-Added Efficiency at 3 dB Gain Compression, 61.7 % Efficiency Tuned, PAE3dB Gain at 3dB compression point, G 13.5 dB 3dB Notes: 1. VD = 32V, IDQ = 50mA, TA = 25C, Pulse Width = 100 us, Duty Cycle = 20% Datasheet Rev. C, Oct 12, 2020 Subject to change without notice - 2 of 20- www.qorvo.com