X-On Electronics has gained recognition as a prominent supplier of WJA1021TR rf amplifier across the USA, India, Europe, Australia, and various other global locations. WJA1021TR rf amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for rf amplifier, ensuring timely deliveries around the world.

WJA1021TR Qorvo

WJA1021TR electronic component of Qorvo
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Part No.WJA1021TR
Manufacturer: Qorvo
Category:RF Amplifier
Description: WJA1021TR triquint semiconductor amplifier rf integrated circuits ics semiconductors
Datasheet: WJA1021TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 3.4473 ea
Line Total: USD 3447.3

Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1000
Multiples : 1000
1000 : USD 3.4473

     
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RoHS - XON
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We are delighted to provide the WJA1021TR from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the WJA1021TR and other electronic components in the RF Amplifier category and beyond.

WJA1021 +5V Active-Bias InGaP HBT Gain Block Product Features Product Description Functional Diagram GND The WJA1021 is a cascadable gain block that offers high 50 4000 MHz linearity in a low-cost surface-mount package. At 1.9 GHz, 4 17.5 dB Gain 1.9GHz the WJA1021 typically provides 17.5 dB gain, +36.5 dBm +19 dBm P1dB 1.9GHz OIP3, and +19 dBm P1dB. The device is housed in a lead- free/green/RoHS-compliant industry-standard SOT-89 +36.5 dBm OIP3 1.9GHz SMT package using a NiPdAu plating to eliminate the +5V Single Supply possibility of tin whiskering. 1 Low current draw (90mA) 2 3 The WJA1021 consists of Darlington pair amplifier using a RF IN GND RF OUT Unconditionally stable high reliability InGaP/GaAs HBT process technology. Internally matched to 50 The amplifier has been optimized internally to offer very Function Pin No. high linearity performance at 1.9 GHz while drawing very Robust 1000V ESD, Class 1C Input 1 low current. The MMIC amplifier is internally matched to Output/Bias 3 Lead-free/green/RoHS-compliant 50 and only requires DC-blocking capacitors and a bias Ground 2, 4 SOT-89 package inductor for operation. An internal active bias is designed to enable stable performance over temperature and allow for operation directly from a +5V supply voltage. Applications The broadband amplifier can be directly applied to various GSM, PCS, CDMA, WCDMA current and next generation wireless technologies such as GSM, CDMA, W-CDMA, WiBro, and WiMAX. The WiMAX, WiBro WJA1021 is ideal for general purpose applications such as Repeaters, BTS Transceivers LO buffering or amplification and pre-driver stages within RFID the 50 to 4000 MHz frequency range. (1) (3) Specifications Typical Performance Parameter Units Min Typ Max Parameter Units Typical Operational Bandwidth MHz 50 4000 Frequency MHz 200 900 1900 2100 Test Frequency MHz 1900 S21 dB 19.5 18.4 16.7 16.4 Gain dB 16.1 17.5 19.1 S11 dB -12 -19 -29 -25 Input Return Loss dB -15 S22 dB -20 -13 -10 -10 Output Return Loss dB -10 Output P1dB dBm +20.2 +20.1 +19 +18 (2) Output P1dB dBm +19 Output IP3 dBm +36.9 +38.9 +36.6 +36 (2) Output IP3 dBm +33.5 +36.5 Noise Figure dB 5.3 5.6 6.3 6.6 Noise Figure dB 6.3 3. Listed typical performance parameters measured on evaluation board. Device Voltage V 5 Device Current mA 80 90.5 100 1. Test conditions: 25 C, Supply Voltage = +5 V, 50 System. S-parameters and 3OIP measured at device pins. All other specifications measured on evaluation board. 2. 3OIP measured with two tones at an output power of 4 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Not Recommended For New Designs Recommended replacement parts: TQP3M9008 Absolute Maximum Rating Parameter Rating Storage Temperature -55 to +150 C Ordering Information Supply Voltage +6.5 V Thermal Resistance, Rth 78.8 C / W Part No. Description Junction Temperature 150 C +5V Active Bias InGaP HBT Gain Block WJA1021 Input Power +24 dBm (lead-free/green/RoHS-compliant SOT-89 Package) Operation of this device above any of these parameters may cause permanent damage. Standard tape / reel size = 1000 pieces on a 7 reel Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales tqs.com Web site: www.TriQuint.com Page 1 of 4 June 2011 WJA1021 +5V Active-Bias InGaP HBT Gain Block Typical Evaluation Board RF Performance Supply Bias = +5V, I = 90 mA cc Return Loss vs. Frequency Gain vs. Frequency NF vs. Frequency T=25C 10 0 25 -5 8 20 -10 6 15 -15 -20 4 10 -25 2 5 -40C +25C +85C -30 S11 S22 -40C +25C +85C 0 -35 0 0 1000 2000 3000 4000 0 1000 2000 3000 4000 0 1000 2000 3000 Frequency (MHz) Frequency (MHz) Frequency (MHz) P1dB vs. Frequency OIP3 vs. Frequency Pout=3 dBm/tone 22 45 20 40 18 35 16 30 25 14 20 12 +25C -40C +85C +25C -40C +85C 10 15 0 1000 2000 3000 4000 0 1000 2000 3000 4000 Frequency (MHz) Frequency (MHz) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales tqs.com Web site: www.TriQuint.com Page 2 of 4 June 2011 G a in (d B ) O IP 3 (d B m ) S11, S22 (dB) P 1 d B (d B m ) NF (dB)

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Qorvo, Inc.
RF9
RFMD
RFMD (Qorvo)
TriQuint
TriQuint (Qorvo)
TRIQUINT SEMI
TriQuint Semiconductor
TriQuint Semiconductor, Inc

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