EDB104S-T Rectron

EDB101S THRU EDB107S GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere FEATURES * Surge overload rating - 40 amperes peak * Ideal for printed circuit board * Reliable low cost construction utilizing molded * Glass passivated device * Polarity symbols molded on body DB-S * Mounting position: Any ( ) .255 6.5 MECHANICAL DATA .245 (6.2) * Epoxy: Device has UL flammability classification 94V-O .410 (10.4) ( ) .045 1.14 ( ) .360 9.4 .035 (0.89) ( ) .060 1.524 ( ) .037 0.95 .346 (8.8) .144(3.65 ) .307 (7.8) .089 (2.25) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o Ratings at 25 C ambient temperature unless otherwise specified. ( ) .205 5.2 Resistive or inductive load. ( ) .195 5.0 Dimensions in inches and (millimeters) o MAXIMUM RATINGS (At T = 25 C unless otherwise noted) A RATINGS SYMBOL EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S EDB107S UNITS V 50 100 150 200 300 400 600 Volts Maximum Recurrent Peak Reverse Voltage RRM Maximum RMS Bridge Input Voltage V 35 70 105 140 210 280 420 Volts RMS Maximum DC Blocking Voltage V 50 100 150 200 300 400 600 Volts DC o Maximum Average Forward Output Current at T = 55 C I 1.0 Amps A O Peak Forward Surge Current 8.3 ms single half sine-wave I 30 Amps FSM superimposed on rated load (JEDEC method) Typical Current Square Time 2 2 T 3.7 A S I R J A 38 0 C/W Typical Thermal Resistance (Note 3) R J L 12 pF Typical Junction Capacitance (Note 2) C J 15 10 0 Operating and Storage Temperature Range TJ,TSTG -55 to + 150 C o ELECTRICAL CHARACTERISTICS (At T = 25 C unless otherwise noted) A CHARACTERISTICS SYMBOL UNITS EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S EDB107S Volts V 1.05 1.35 1.70 Maximum Forward Voltage at 1.0A DC F o Amps Maximum Reverse Current at Rated T = 25 C 5.0 A I R o DC Blocking Voltage per element T = 100 C A 100 Amps Maximum Reverse Recovery Time (Note 1) trr 50 nSec Note: 1.Test Conditions: I =0.5A,I =-1.0A,I =-0.25A. F R RR 2020-04/97 2.Measured at 1MHz and applied reverse voltage of 4.0 volts. REV:E 3.Thermal Resistance : Mounted on PCB.RATING AND CHARACTERISTICS CURVES ( EDB101S THRU EDB107S ) trr +0.5A 50 10 NONINDUCTIVE NONINDUCTIVE ( - ) D.U.T 0 ( + ) PULSE 25 Vdc GENERATOR (approx) (NOTE 2) -0.25A ( - ) 1 ( + ) OSCILLOSCOPE NON- (NOTE 1) INDUCTIVE NOTES: 1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF. -1.0A 2. Rise Time = 10ns max. Source Impedance = 1cm 50 ohms. SET TIME BASE FOR 10 ns/cm FIG.1FIG.1 TESTTEST CIRCUITCIRCUIT DIAGRAM DIAGRAM AND AND REVERSE REVERSE RECOVERECOVERRYY TIME TIME CHARACTERISTICCHARACTERISTIC 2.0 1000 100 O T = 100 C A 1.0 10 O T = 25 C A 1.0 Single Phase Half Wave 60Hz Resistive or Inductive Load 0 0.1 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 O LEAD TEMPERATURE, ( C) PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG.2FIG.2 TYPICALTYPICAL FORFORWWARD ARD CURRENTCURRENT FIG.3FIG.3 TYPICALTYPICAL REVERSE REVERSE DERADERATING TING CURCURVEVE CHARACTERISTICS CHARACTERISTICS AVERAGE FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (uA)