Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.EGP10A - EGP10K 1.0 Ampere Glass Passivated High Efficiency Rectifiers
July 2007
EGP10A - EGP10K
1.0 Ampere Glass Passivated High Efficiency Rectifiers
Features
Superfast recovery time for high efficiency
Low forward voltage, high current capability
Low leakage current
High surge current capability
DO-41 Glass case
COLOR BAND DENOTES CATHODE
Absolute Maximum Ratings* T = 25C unless otherwise noted
a
Symbol Parameter Value Units
Average Rectified Current
I 1.0 A
O
.375 lead length @ TL = 75C
i Peak Forward Surge Current
f(surge)
8.3 ms single half-sine-wave 30 A
Superimposed on rated load (JEDEC method)
P Total Device Dissipation 2.5 W
D
17 mWC
Derate above 25C
I Thermal Resistance, Junction to Ambient 50 C/W
C
T , T Junction and Storage Temperature Range -65 ~ 150 C
J STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* T = 25C unless otherwise noted
a
Device
Parameter Units
10A 10B 10C 10D 10F 10G 10J 10K
Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V
Maximum RMS Voltage 35 70 105 140 210 280 420 560 V
DC Reverse Voltage (Rated VR) 50 100 150 200 300 400 600 800 V
Maximum Reverse Current
@ rated VR TA = 25C 5.0 A
TA = 125C 100 A
Maximum Reverse Recovery Time
50 75 nS
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Maximum Forward Voltage @ 1.0 A 0.95 1.25 1.7 V
Typical Junction Capacitance
22 15 pF
VR = 4.0 V, f = 1.0 MHz
* Pulse Test: Pulse Width300s, Duty Cycle2%
2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
EGP10A - EGP10K Rev. A