TVS RECTRON TFMBJ SEMICONDUCTOR TECHNICAL SPECIFICATION SERIES SURFACE MOUNT GPP GPP TRANSIENT VOLTAGE SUPPRESSOR 600 WATT PEAK POWER 5.0 WATTS STEADY STATE FEATURES * Plastic package has underwriters laboratory * Glass passivated chip construction * 600 watt surage capability at 1ms * Excellent clamping capability * Low zener impedance DO-214AA * Fast response time ( ) 0.083 2.11 ( ) 0.155 3.94 0.077 (1.96) 0.130 (3.30) 0.180 (4.57) ( ) 0.160 4.06 0.012 (0.305) 0.006 (0.152) o ( ) Ratings at 25 C ambient temperature unless otherwise specified. 0.096 2.44 ( ) 0.084 2.13 0.060 (1.52) 0.008 (0.203) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.030 (0.76) ( ) o 0.004 0.102 Ratings at 25 C ambient temperature unless otherwise specified. ( ) 0.220 5.59 ( ) 0.205 5.21 Dimensions in inches and (millimeters) DEVICES FOR BIPOLAR APPLICATIONS For Bidirectional use C or CA suffix for types TFMBJ5.0 thru TFMBJ170 Electrical characteristics apply in both direction o MAXIMUM RATINGS (At TA = 25 C unless otherwise noted) RATINGS SYMBOL VALUE UNITS Peak Power Dissipation with a 10/1000uS (Note 1,2, Fig.1) PPPM Minimum 600 Watts Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.3 ) IPPM SEE TABLE 1 Amps o Steady State Power Dissipation at TL = 75 C (Note 2) PM(AV) 5.0 Watts Peak Forward Surge Current 8.3mS single half sine-wave superimposed on rated load (JEDEC method) (Note 2,3) IFSM 100 Amps unidirectional only Maximum Instantaneous Forward Voltage at 50A for unidirectional VF SEE NOTE 4 Volts only (Note 3,4) 0 Operating and Storage Temperature Range TJ, TSTG -55 to + 150 C o 2002-12 NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25 C per Fig.2. 2. Mounted on 0.2 X 0.2( 5.0 X 5.0mm ) copper pad to each terminal. o 3. Lead temperature at TL = 25 C 4. Measured on 8.3mS single half sine-wave duty cycle = 4 pules per minute maximum. 5. VF = 3.5V on TFMBJ-5.0 thru TFMBJ-90 devices and VF = 5.0V on TFMBJ-100 thru TFMBJ-170 devices.( ) RATING AND CHARACTERISTIC CURVES TFMBJ5.0 THRU TFMBJ170CA FIG. 1 - PEAK PULSE POWER RATING CURVE FIG. 2 - PULSE DERATING CURVE 100 100 Non-Repetitive Pulse Waveform Shown in Fig.3 75 TA = 25 10 50 1.0 25 0.2X0.2 (5.0X5.0mm) copper pad areas 0.1 0 0.1uS 1.0uS 10uS 100uS 1.0mS 10mS 75 025 50 100 125 150 175 200 TP, PULSE WIDTH, sec TA, AMBIENT TEMPERATURE,( ) FIG. 3 - PULSE WAVEFORM FIG. 4 - TYPICAL JUNCTION CAPACITANCE 150 6,000 f = 1.0 MHz Pulse Width (td) is Defined Vsig = 50mVp-p tr = 10usec. as the Point Where the Peak TJ = 25 Measured at Current Decays to 50% of IPPM Zero Bias Peak Value IPPM 100 1,000 IPPM HALF VALUE - 2 10/1000usec. Waveform Measured at as Defined by R.E.A. Stand off Voltage,VWM 50 100 td 0 10 0 1.0 2.0 3.0 4.0 1.0 10 100 200 t, TIME,mS V(WM), BREAKDOWN VOLTACE, VOLTS FIG. 5 - TYPICAL JUNCTION CAPACITANCE FIG. 6 - MAXIMUM NON-REPETITIVE FORWARD BIDIRECTIONAL SURGE CURRENT UNIDIRECTIONAL 6,000 200 f = 1.0 MHz Vsig = 50mVp-p 8.3ms Single Half Sine-Wave TJ = 25 (JEDED Method) Unidirectional only Measured at 100 Zero Bias 1,000 Measured at Stand off Voltage,VWM 100 10 10 1.0 10 100 200 1 10 100 V(WM), BREAKDOWN VOLTACE, VOLTS NUMBER OF CYCLES AT 60 Hz RECTRON CJ, JUNCTION CAPACITANCE,pF IPPM, PEAK PULSE CURRENT,% PPPM, PEAK PULSE POWER, KW CJ, CAPACITANCE, pF PEAK PULSE POWER (PPP) OR CURRENT IFSM, PEAK FORWARD SURGE CURRENT AMPERES (IPP) DERATING IN PERCENTAGE,%