TIP120 TO-220 DARLING TRANSISTOR (NPN) FEATURES Power application * TO-220 .184 (4.67) .155 (3.94) .406 (10.31) .147 (3.74) .114 (2.89) .176 (4.47) .394 (10.01) .102 (2.59) .054 (1.37) MECHANICAL DATA .046 (1.17) * Case: Molded plastic .012 (0.30) * Epoxy: UL 94V-O rate flame retardant .000 (0.00) .491 (12.46) * Lead: MIL-STD-202E method 208C guaranteed .475 (12.06) .350 (8.90) * Mounting position: Any .335 (8.50) .156 (3.96) .140 (3.56) .543 (13.8) .054 (1.37) .528 (13.4) .046 (1.17) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .036 (0.91) .028 (0.71) O Ratings at 25 C ambient temperature unless otherwise specified021 (0.53) .100 (25.4) TYP .012 (0.31) .111 (2.82) .204 (5.18) .099 (2.52) .196 (4.98) Dimensions in inches and (millimeters) o MAXIMUM RATINGES ( TA = 25 C unless otherwise noted ) RATINGS SYMBOL LIMITS UNITS V Collector-Base voltage CBO 60 V V Collector-Emitter voltage CEO 60 V V Emitter-Base voltage EBO 5 V Collector current-continutious IC 5 A Collector Power dissipation W Pd 2 R 62.5 qJA o Thermal Resistance C/W R qJC 1.92 o Storage temperature Tstg -65 ~150 C o ELECTRICAL CHARACTERISTICS ( TA = 25 C unless otherwise noted ) CHARACTERISTICS SYMBOL MIN MAX UNITS Collector-base breakdown voltage (I = 1mA, I = 0) V 60 - C E (BR)CBO V Collector-Emitter breakdown voltage (I = 30mA, I = 0) C B V 60 - CEO(SUS) Collector cut-off current (V = 60V ,I = 0) I - 0.2 mA CB E CBO Collector cut-off current (V = 30V ,I = 0) I - 0.5 mA CE B CEO Emitter cut-off current (V = -5V,I = 0) I E C EBO - 2 mA DC current gain (V = 3V,I = 0.5A) h CE C FE(1) 1000 - - DC current gain (V = 3V,I = 3A) h 1000 - - CE O FE(2) V Collector-emitter saturation voltage (I = 3A,I = 12mA) CE(sat) - 2 V C B V Collector-emitter saturation voltage (I = 5A,I = 20mA) CE(sat) - 4 V C B Base-emitter ON voltage (I = 3A,I = 12mA) V - 2.5 V C B BE(on) Output Capacitance (V = 10V,I = 0, f= 0.1MHz) CB E C - 200 pF ob Note:Fully ROHS complian,100% Sn plating (Pb-free. 2007-3RATING AND CHARACTERISTICS CURVES (TIP120) 1.0 0.7 D =0.5 0.5 D =0.2 0.3 0.2 D =0.1 0.1 P (pk) 0.07 D =0.05 Z = r(t) R qJC qJC 0.05 O R = 1.92 C/W MAX. qJC D =0.02 D CURVES APPLY FOR POWER 0.03 PULSE TRAIN SHOWN t 1 READ TIME AT t 1 t 2 0.02 T -T = P Z J(pk) C (pk) qJC(t) D =0.01 DUTY CYCLE, D =t /t 1 2 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 t TIME, (mS) , Figure1 THERMAL RESISTANCE 20 O T =150 C J 100uS 10 500uS 5.0 There are two limitations on the power handing ability of a tran- sistor average junction temperature and second breakdown.Safe DC operating aresa curves indicate I -V limits of the transistor th- C CE 2.0 at must be observed for reliable operation, i.e.,the transistor must 1mS not be subjected to greater dissipation than the curves indicate. 1.0 O 5mS The data of Figure 2 is based on T =150 C,T is variable d- J(pk) C 0.5 epending on conditions. Second breakdown pulse limit are valid BONDING WIRE LIMITED O for duty cycles to 10% provided T <150 C.T may be calc- J(pk) J(pk) THERMALLY LIMITED ulated from the data in Figure 1. At high case temperatures, ther- 0.2 O T =25 C(SINGLE PULSE) C mal limitations will reduce the power that can be handled to valu- SECOND BREAKDOWN LIMITED 0.1 es less than the limitations imposed by second breakdown. CURVE APPLY BELOW RATED V CEO 0.05 0.02 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 V COLLECTOR-EMITTER VOLTAGE, (V) CE, Figure2 ACTIVE-REGION SAFE OPERATING AREA 10K 300 O O T = 25 C T = 25 C J C 5K V = 40 Vdc CE 3K I = 3.0 Adc 2K C 200 1K C ob 500 100 300 200 C jb 100 70 50 50 30 20 10 30 1.0 2.0 5.0 10 20 50 100 200 500 1K 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f FREQUENCY, (KHz) V REVERSE VOLTAGE, (V) , R, Figure3 Small-Signal Current Gain Figure4 CAPACITANCE h , SMALL-SIGNAL CURRENT GAIN r(t), TRANSIENT THERMAL RESISTANCE, (NORMALIZED) FE I , COLLECTOR CURRENT, (A) C C, CAPACITANCE, (pF)