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70V24L55PFI

70V24L55PFI electronic component of Renesas

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SRAM 4Kx16, 3.3V DUAL- PORT RAM

Manufacturer: Renesas
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70V24L55PFI
Renesas

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HIGH-SPEED 3.3V IDT70V24S/L 4K x 16 DUAL-PORT STATIC RAM IDT70V24 easily expands data bus width to 32 bits or more   using the Master/Slave select when cascading more than True Dual-Ported memory cells which allow simultaneous one device reads of the same memory location M/S = VIH for BUSY output flag on Master High-speed access M/S = VIL for BUSY input on Slave Commercial: 15/20/25/35/55ns (max.) BUSY and Interrupt Flag Industrial: 20/25/35/55ns (max.) On-chip port arbitration logic Low-power operation Full on-chip hardware support of semaphore signaling IDT70V24S between ports Active: 400mW (typ.) Fully asynchronous operation from either port Standby: 3.3mW (typ.) LVTTL-compatible, single 3.3V (0.3V) power supply IDT70V24L Available in 84-pin PGA, 84-pin PLCC and 100-pin TQFP Active: 380mW (typ.) Industrial temperature range (-40C to +85C) is available Standby: 660 W (typ.) for selected speeds Separate upper-byte and lower-byte control for multiplexed bus compatibility      R/R R/L  L R L R L R L R I/O8L-I/O15L I/O8R-I/O15R I/O I/O Control Control I/O -I/O 0R 7R I/O0L-I/O7L (1,2) (1,2)   R L A 11L A11R Address MEMORY Address Decoder ARRAY Decoder A0L A 0R 12 12 ARBITRATION INTERRUPT L R SEMAPHORE L R LOGIC R/L R/R  R  L (2) (2) M/ R L 2911 drw 01 NOTES: 1. (MASTER): BUSY is output; (SLAVE): BUSY is input. 2. BUSY outputs and INT outputs are non-tri-stated push-pull.  1 DSC-2911/8 2000 Integrated Device Technology, Inc.IDT70V24S/L High-Speed 4K x 16 Dual-Port Static RAM Industrial and Commercial Temperature Ranges    The IDT70V24 is a high-speed 4K x 16 Dual-Port Static RAM. The reads or writes to any location in memory. An automatic power down IDT70V24 is designed to be used as a stand-alone 64K-bit Dual-Port RAM feature controlled by CE permits the on-chip circuitry of each port to enter or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit-or-more a very low standby power mode. word systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach Fabricated using IDTs CMOS high-performance technology, these devices typically operate on only 400mW of power. in 32-bit or wider memory system applications results in full-speed, error- free operation without the need for additional discrete logic. The IDT70V24 is packaged in a ceramic 84-pin PGA, an 84-Pin This device provides two independent ports with separate control, PLCC and a 100-pin Thin Quad Flatpack. address, and I/O pins that permit independent, asyn-chronous access for  !    INDEX 1110 9 8765 4 3 2 18483 82 81 80 79 78 77 76 75 I/O8L 12 74 A7L 9L 6L I/O 13 73 A 10L I/O 72 A5L 14 11L I/O 71 4L 15 A 12L I/O 70 A3L 16 I/O13L 2L 17 69 A GND 68 18 A1L I/O14L A0L 19 67 I/O15L 66 L 20 IDT70V24J (4) VCC L J84-1 65 21 GND GND 64 22 84-Pin PLCC I/O0R (5) 63 M/ 23 Top View I/O1R 24 62 R I/O2R 61 R 25 VCC 60 A0R 26 3R I/O 59 1R 27 A I/O4R A2R 28 58 I/O5R 3R 29 57 A I/O6R 4R 30 56 A I/O7R A5R 31 55 8R 32 I/O 54 A6R 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 2911 drw 02 Index 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 1 N/C N/C 75 2 74 N/C N/C N/C 3 73 N/C N/C 4 72 N/C I/O10L 5 71 A5L I/O11L 6 70 A 4L I/O12L 7 69 A3L 68 I/O13L 8 A2L 9 67 GND A1L 10 66 I/O14L A0L IDT70V24PF 15L 11 65 I/O L (4) PN100-1 VCC 12 64 L GND 13 63 GND 100-Pin TQFP 62 I/O0R 14 (5) M/ Top View 61 I/O1R 15 R 60 I/O2R 16 R 59 VCC 17 A0R 58 I/O3R 18 A1R I/O 57 4R 19 A2R I/O5R 20 56 A3R 55 I/O6R 21 A4R 54 N/C 22 N/C NOTES: 53 N/C 23 N/C 1. All VCC pins must be connected to power supply. 52 N/C 24 N/C 2. All GND pins must be connected to ground supply. 51 N/C 25 N/C 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 3. J84-1 package body is approximately 1.15 in x 1.15 in x .17 in. PN100-1 package body is approximately 14mm x 14mm x 1.4mm. 2911 drw 03 4. This package code is used to reference the package diagram. 5. This text does not indicate orientation of the actual part-marking. 6.422 9R I/O I/O7L I/O10R 6L I/O I/O11R I/O5L I/O12R I/O4L I/O13R I/O3L I/O14R I/O2L GND GND I/O15R I/O1L R I/O0L R/R L GND VCC  R R/L R L  R L R L N/C L A11R N/C 10R A A11L A9R A10L A8R 9L A A7R 8L A 9L I/O7R I/O I/O8L I/O8R I/O7L I/O9R I/O10R I/O6L I/O11R I/O5L I/O12R I/O4L I/O13R I/O3L I/O14R I/O2L GND GND I/O I/O15R 1L I/O0L R R/R L VCC GND R/L  R  L R L R  L R  L  N/C A11R N/C A11L A10R A10L A9R A9L A8R 7R A8L A 6R A7L A A5R A6L

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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